Macronix International Co., Ltd.

Novatek Microelectronics Corp.

Htc Corporation

Wolley Inc.

Wolly Inc.

Yu-Ming Chang

Hsiang-Pang Li

Yuan-Hao Chang

Tei-Wei Kuo

Yung-Chun Li

Hung-Sheng Chang

Wei-Chieh Huang

Ping-Hsien Lin

Nai-Ping Kuo

Chin-Hung Hsu

Chih-Chang Hsieh

Chuen-Shen Bernard Shung

Tzu-Hsiang Su

Ting-Yu Liu

Li-Chun Huang

Chien-Hsin Liu

Cheng-Yuan Wang

Hsing-Chen Lu

Tai-Chun Kuo

Hang-Ting Lue

Chao-I Wu

Win-San Khwa

Kuo-Pin Chang

Hsi-Chia Chang

Yu-Ming Huang

Chien-Chung Ho

Ming-Sian Bai

Yi-Yang Lo

Shih-Fu Huang

Tang-Yao Jheng

Hsiu-Chang Chen

Hsin-Yu Chang

Bo-Cheng You

A method and apparatus for read wearing control for storage class memory (SCM) are disclosed. The read data control apparatus, located between a host and the SCM subsystem, comprises a read data cache, an address cache and an SCM controller. The address cache stores pointers pointing to data stored in logging area(s) located in the SCM. For a read request, the read wearing control determines whether the read request is a read data cache hit, an address cache hit or neither (i.e., read data cache miss and address cache miss). For the read data cache hit, the requested data is returned from the read data cache. For the address cache hit, the requested data is returned from the logging area(s) and the read data becomes a candidate to be placed in the read data cache. For read data cache and address cache misses, the requested data is returned from SCM.

Apparatus and method of read leveling for storage class memory

A method and apparatus of bad location management for storage class memory are disclosed. A nonvolatile memory is partitioned into a non-reserved space and a reserved space, which are divided into multiple data units. The health status of the data units in the non-reserved space are classified into multiple classes including a mostly-good class. For host data read, the data from a mostly-good data unit are read and whether the data includes a pointer is checked. If no pointer, the data read are returned as the host data. Otherwise, the data unit pointed by the pointer is read. For data write, the data from a mostly-good data unit are read. If no pointer in the read data, the host data are written into the mostly-good data unit. Otherwise, the host data are written into the data unit in the reserved space pointed by the pointer.

Apparatus and method of bad location management for storage class memory using distributed pointers

A data management method for memory and a memory apparatus are provided. The memory includes a number of memory pages. Each of the memory pages includes multiple memory cells. Each of the memory cells includes a first bit and a second bit. Each of the memory cells has a first logical state, a second logical state, a third logical state, and a fourth logical state. The data management method for memory includes the following steps. A data update command corresponding to a logical address is received. The logical address corresponds to a physical address before receiving the data update command. A sanitizing voltage is applied to a first target memory cell of the memory cells in a target memory page of the memory pages located at the physical address. The logical state of the first target memory cell is changed.

Data management method for memory and memory apparatus

A data allocating method includes steps of: determining whether data to be written into a physical memory block is hot data or cold data; when the data is hot data, according to a hot data allocating order, searching at least one first empty sub-block from the physical memory block to allocate the data; when the data is cold data, according to a cold data allocating order, searching at least one second empty sub-block from the physical memory block to allocate the data.

Data allocating method and electric system using the same

A memory management method includes: providing a hybrid memory comprising a first type memory and a second type memory; providing an inactive list and a read active list for recording in-used pages on the first type memory; providing a write active list for recording in-used pages on the second type memory; allocating a page from the first type memory according to a system request, and inserting the page into the inactive list accordingly; moving the page from the inactive list to the write active list or the read active list in response to two or more successive access operations on the page; and referring the page to a physical address on the second type memory when the page is in the write active list.

Memory system and memory management method thereof

A method for writing data into a persistent storage device includes grouping a plurality of data entries stored in a temporary storage device to form a data unit, such that the data unit has a size equal to an integer multiple of a size of an access unit of the persistent storage device. The method further includes writing the data unit into the persistent storage device.

Method, apparatus, and storage medium for writing data into persistent storage device

An operating method of a memory controller, for a memory device including a plurality of cells, includes steps of: checking states of the cells; marking at least one specific bit-channel according to the states of the cells; and performing an uneven wear leveling scheme on at least one target cell storing messages from the at least one specific bit-channel, such that the wear level of the at least one target cell is different from other cells.

Memory controller and operating method thereof

A memory device includes a memory controller and a non-volatile memory communicatively coupled to the memory controller and storing a mapping table and a journal table. The memory controller is configured to write data and a logical address of the data into the non-volatile memory, load mapping information related to the logical address of the data from the mapping table of the non-volatile memory into a mapping cache of the memory controller, update the mapping cache with an updated mapping relationship between the logical address of the data and a physical address of the data, and perform a journaling operation to write the updated mapping relationship into the journal table.

Memory device and operating method of same

A read leveling method for a memory device is provided. The memory device includes a first memory block and at least a second memory block. The read leveling method includes the following steps. Determining whether a block read count of the first memory block is larger than or equal to a first threshold. Detecting a page read count of a page of the first memory block when the block read count of the first memory block is larger than or equal to the first threshold. Determine whether the block read count of the first memory block is larger than or equal to a second threshold. Move data of one of the page of the first memory block to a page of the second memory block when the block read count of the first memory block is larger than or equal to the second threshold.

Read leveling method and memory device using the same

An erasing method and a memory device are provided. The memory device includes a plurality of memory blocks. Each of the memory blocks has n sub-blocks. The erasing method includes the following steps. A first erase region is selected from a first memory block of the memory blocks, and the first erase region includes at least one sub-block. A sub-block erase operation is performed on the first erase region of the first memory block.

Erasing method and memory device using the same

An operating method for a memory, the memory comprising at least one memory block including a plurality of first pages and a plurality of second pages corresponding to the first pages, the operating method including the following steps: determining whether a target first page of the first pages is valid, wherein the target first page is corresponding to a target second page of the second pages; if the target first page is valid, performing first type programming on the target second page; if the target first page is invalid, performing second type programming on the target second page.

Memory orprating method and memory device using the same

A method to operate a single bit per cell memory comprises erasing a group of memory cells establishing a first logical value by setting threshold voltages in a first range of threshold voltages. First writing, after said erasing, includes programming first selected memory cells to establish a second logical value by setting threshold voltages in a second range of threshold voltages, and saving a sensing state parameter to indicate a first read voltage. Second writing, after said first writing, includes programming second selected memory cells to establish the second logical value by setting threshold voltages in a third range of threshold voltages, and saving the sensing state parameter to indicate a second read voltage. After a number of writings including said first writing and said second writing reaches a threshold number for writing the group of memory cells, the group of memory cells can be erased.

Reprogramming single bit memory cells without intervening erasure

A multiple-bit-per-cell, page mode memory comprises a plurality of physical pages, each physical page having N addressable pages p(n). Logic implements a plurality of selectable program operations to program an addressed page. Logic select one of the plurality of selectable program operations to program an addressed page in the particular physical page using a signal that indicates a logical status of another addressable page in the particular physical page. The logical status can indicate whether the other addressable page contains invalid data. The first program operation overwrites the other addressable page, and the second program operation preserves the other addressable page. The first program operation can execute more quickly than the second program operation. The logic can also be applied for programming multiple-bit-per-cell memory not configured in a page mode.

Variant operation sequences for multibit memory

A method for managing block erase operations is provided for an array of memory cells including erasable blocks of memory cells in the array. The method comprises maintaining status data for a plurality of sub-blocks of the erasable blocks of the array. The status data indicate whether the sub-blocks are currently accessible and whether the sub-blocks are invalid. The method comprises, in response to a request to erase a selected sub-block of a particular erasable block, issuing an erase command to erase the particular block if the other sub-blocks of the particular erasable block are invalid, else updating the status data to indicate that the selected sub-block is invalid.

Half block management for flash storage devices

A method for programming a memory device comprises the following steps: performing an interleaving programming, including: programming a first memory cell during a first time interval and correspondingly verifying the first memory cell during a second time interval; programming a second memory cell during a third time interval and correspondingly verifying the second memory cell during a fourth time interval between the first and second time intervals; and inserting at least one dummy cycle between the first and second time intervals to ensure that a resistance change per unit of time of the first memory cell is less than a threshold.

Growing community of inventors

Pingtung County, Taiwan

Yu-Ming Chang