Sumco Corporation

Yu Minamide

Naoyuki Wada

Yasutaka Takemura

A carrier is formed in ring shape having a bottom surface mounted on an upper surface of a susceptor, an upper surface that contacts and supports an outer edge of a back surface of the wafer, an outer peripheral side wall surface and an inner peripheral side wall surface, and a gas vent hole is provided to penetrate between a space partitioned by the wafer, the carrier and the susceptor and a back surface of the susceptor.

Vapor deposition device and carrier used in same

Using the first robot, the carrier standing by in the load lock chamber is deposited into the reaction chamber without mounting the wafer before processing, and cleaning gas is supplied while the reaction chamber is maintained at a predetermined cleaning temperature, and the carrier that has been cleaned in the reaction chamber is transferred to the load lock chamber using the first robot. The carrier and susceptor are cleaned at a predetermined frequency. After that, the carrier is carried out from the reaction chamber, and the reaction gas is supplied to the reaction chamber to form a polysilicon film on the surface of the susceptor.

Vapor deposition method and vapor deposition device

Using the first robot, the carrier standing by in the load lock chamber is deposited into the reaction chamber without mounting the wafer before processing, and cleaning gas is supplied while the reaction chamber is maintained at a predetermined cleaning temperature, and the carrier that has been cleaned in the reaction chamber is transferred to the load lock chamber using the first robot. The carrier is cleaned at a predetermined frequency.

A vapor deposition device is provided that can ameliorate or improve the LPD quality. A vapor deposition device includes a first holder that supports a carrier at a topmost-level and a second holder that supports the carrier under the first holder in a load-lock chamber, and a second robot mounts a before-treatment wafer extracted from a wafer storage container on the carrier standing by at the first holder in the load-lock chamber.

Vapor deposition device

The amount of gas evacuation from a reaction chamber of an apparatus for manufacturing epitaxial wafers is controlled to any one of: a first amount of gas evacuation when an epitaxial film formation process is performed in the reaction chamber; a second amount of gas evacuation smaller than the first amount of gas evacuation when a gate valve is opened to load or unload a wafer between the reaction chamber and a wafer transfer chamber; and a third amount of gas evacuation larger than the first amount of gas evacuation until a purge process for a gas in the reaction chamber is completed after the epitaxial film formation process is completed in the reaction chamber.

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Tokyo, Japan

Yu Minamide