Korea Advanced Nano Fab Center

Yu Min Koh

Kyungho Park

Hyeong Ho Park

Chuyoung Cho

A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an AlGaN layer, an InAlN layer and an InAlGaN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the AlGaN layer, the InAlN layer and the InAlGaN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time.

Growing community of inventors

Gyeonggi-do, South Korea

Yu Min Koh