Taiwan Semiconductor Manufacturing Comp. Ltd.

Asia Optical Co., Ltd.

Sintai Optical (shenzhen) Co., Ltd.

Asia Optical International Ltd.

Other

Trend Micro Inc.

Raydium Semiconductor Corporation

Alger Technology Co., Ltd.

Yu-Min Chang

Yu-Hung Lin

Kuei-Pin Lee

Chen-Kuang Lien

Hung-Wen Su

Chia-Ming Tsai

Ya-Lien Lee

Yao-Hsiang Liang

Ching-Fu Yeh

Chin-Kun Wang

Chi-Yu Chou

Liang-Chen Chi

Yu-Chang Hsiao

Chih-Wei Chang

You-Hua Chou

Chien-Chung Su

Lun-Chieh Chiu

Yen-Yu Chen

Chyi-Tsong Ni

Miin-Jang Chen

Sheng-Hsuan Lin

Ming-Hung Chen

Shih-Chi Lin

Yueh-Ching Pai

Che-Fu Yeh

Yao Hsiang Liang

Yi-Li Cheng

Ke-Chih Liu

Peng-Shih Pu

Yao-Tang Chang

Shih-Han Hsu

Fang-Wen Tsai

Wan-Cheng Yang

Tsung-Fu Lin

Chung-Sung Tsai

Li-Tien Huang

Miin-Jang Cheng

Keng-Ham Lin

Wei-Lun Jian

Pong-Hsiung Leu

Jo-Wei Chen

Chia-Ling Pai

Yan-Han Lin

Hsin-Chen Tsai

A method of cleaning wafer-cleaning brushes includes passing a wafer having a first polished main side and an opposing unpolished backside between a pair of substantially cylindrical shaped wafer-cleaning brushes are rotated about an axial direction of the brushes while passing the wafer between the pair of wafer-cleaning brushes. A cleaning solution is applied to the brushes while passing the wafer between the pair of wafer-cleaning brushes. While passing between the pair of brushes, the first polished main side of the wafer faces a first direction, the first direction is an opposite direction to which a polished side of a production wafer faces during a subsequent polished wafer cleaning operation. The substantially cylindrical shaped wafer-cleaning brushes include a plurality of protrusions on an external surface of the brushes, and the brushes contact the wafer at least a portion of time the wafer is passing between the pair of brushes.

Breaking-in and cleaning method and apparatus for wafer-cleaning brush

A multifunctional wheelchair contains: a body, a support plate, a lifting seat, and a shampoo basin. The body includes a retractable mounting, a chair back, at least one drive device, and two frames. The two frames have two main wheels, the two frames have two guide wheels, and the two armrests are arranged on a second drive device. A respective armrest has an abutting portion, and the retractable mounting have two racks. The support plate is detachably engaged on the retractable mounting of the body. The lifting seat is removably engaged on the retractable mounting of the body, and the lifting seat includes a saddle on a third drive device which is configured to drive the saddle to lift or descend adjustably. The shampoo basin is detachably connected on the chair back and included a washing chamber.

Multifunctional wheelchair

A back clapping machine with chest percussion function includes a casing, a movement mechanism, a clap mechanism, and a buffer unit. The casing includes an outer cover, a rear cover, and a housing space therein, in which the movement mechanism is disposed. The clap mechanism is in the housing space and connected with the front lateral side of the movement mechanism. The buffer unit is in the housing space and arranged to elastically abut against the outer cover and the rear cover therebetween. Thus, the present invention automatically carries out back clapping operation and detects the distance for back clapping, also provides a shock buffering effect, thus achieving a back clapping chest percussion operation through a hand alike structure and preventing pressure ulcer.

Back clapping machine with chest percussion function

A method includes forming a trench in a low-K dielectric layer, where the trench exposes an underlying contact area of a substrate. A first tantalum nitride (TaN) layer is conformally deposited within the trench, where the first TaN layer is deposited using atomic layer deposition (ALD) or chemical vapor deposition (CVD). A tantalum (Ta) layer is deposited on the first TaN layer conformally within the trench, where the Ta layer is deposited using physical vapor deposition (PVD). An electroplating process is performed to deposit a conductive layer over the Ta layer. A via is formed over the conductive layer, where forming the via includes depositing a second TaN layer within the via and in contact with the conductive layer.

Device and method for reducing contact resistance of a metal

A smart home includes Internet of things (IOT) devices that are paired with an IOT gateway. A backend system is in communication with the IOT gateway to receive IOT operating data of the IOT devices. The backend system generates a machine learning model for an IOT device. The machine learning model is consulted with IOT operating data of the IOT device to detect anomalous operating behavior of the IOT device. The machine learning model is updated as more and newer IOT operating data of the IOT device are received by the backend system.

Cybersecurity for a smart home

An image processing apparatus is applied to a display and includes a sampling unit, a comparing unit, a determining unit and an operating unit. The sampling unit is configured to receive a pulse-width modulation (PWM) signal and sample the PWM signal to output a current image. The comparing unit is coupled to the sampling unit and configured to compare the current image with a previous image to generate a comparison result, wherein the previous image is prior to the current image. The determining unit is coupled to the comparing unit and configured to determine whether the current image is the same with the previous image according to the comparison result and a threshold value. If a determination result of the determining unit is YES, the operating unit stops its operation.

Image processing apparatus and image processing method

A method includes applying a first amount of heat to a vapor region of a precursor canister, measuring an indication of saturated vapor pressure within the vapor region during the applying the first amount of heat, and applying a second amount of heat to the vapor region of the precursor canister, the second amount of heat being adjusted from the first amount of heat based on the indication of saturated vapor pressure.

Material delivery system and method

Methods for use in electrochemical plating processes are described herein. An exemplary method includes determining a wafer electrical property associated with a wafer, wherein the wafer electrical property affects the wafer during an electrochemical plating (ECP) process; adjusting a process parameter to be applied to the wafer during the ECP process based on the determined wafer electrical property, wherein the process parameter specifies at least one of a current or a voltage; and applying the adjusted process parameter to the wafer undergoing the ECP process. In some implementations, the process parameter is adjusted, such that a peak entry current of the ECP process substantially matches a plating current of the ECP process induced following the peak entry current.

Electrochemical plating

A device comprises a semiconductor substrate; a dielectric layer deposited over the semiconductor substrate, the dielectric layer including a trench; and a structure in the trench. The structure includes a chemical vapor deposition (CVD) TaN layer formed on a side wall of the trench; a physical vapor deposition (PVD) Ta layer formed over the CVD TaN layer; and a metal-containing layer formed over the PVD Ta layer.

A method for forming an interconnect structure includes forming a dielectric layer overlying a substrate, forming an opening in the dielectric layer, forming a metal-containing layer overlying the opening in the dielectric layer, forming a conformal protective layer overlying the metal-containing layer, filling a conductive layer in the opening, and performing a thermal process to form a metal oxide layer barrier layer underlying the metal-containing layer.

Barrier structure for copper interconnect

An improved interconnect structure and a method for forming the interconnect structure is disclosed that allows the interconnect structure to achieve a lower Rc. To lower the Rc of the interconnect structure, an &#x3b1;-phase inducing metal layer is introduced on a first Ta barrier layer of &#x3b2; phase to induce the subsequent deposition of Ta thereon into the formation of an &#x3b1;-phase Ta barrier layer. The subsequently deposited Ta barrier layer with a primary crystallographic structure of &#x3b1; phase has a lower Rc than that of the &#x3b2;-phase Ta barrier layer.

Method for forming interconnect structure

A method of fabricating an integrated circuit includes depositing a cap layer on a substrate; depositing a dielectric layer on the cap layer; and forming a trench in the dielectric layer. The method further includes depositing a tantalum nitride (TaN) layer on a sidewall of the trench such that the TaN layer has a greater concentration of nitrogen than tantalum. The method further includes depositing a tantalum (Ta) layer on the TaN layer using physical vapor deposition (PVD); and depositing a metal layer over the Ta layer.

A method for electrochemical plating includes providing a wafer for an electrochemical plating (ECP) process, determining a wafer electrical property affecting the ECP process, adjusting a plating current or voltage applied in the ECP process based on the determined wafer electrical property, and electroplating the wafer with the adjusted plating current or voltage. A controller for controlling a power supply, and a system for electrochemical plating are also disclosed.

A wide-angle lens assembly includes a first lens, a second lens, a third lens, a first stop, a fourth lens, a fifth lens and a sixth lens, all of which are arranged in sequence from an object side to an image side along an optical axis. The first lens is with negative refractive power. The second lens is with negative refractive power. The third lens is with positive refractive power. The fourth lens is with positive refractive power. The fifth lens is with negative refractive power. The sixth lens is with positive refractive power. The fifth lens satisfies 16.1&#x2266;Vd&#x2266;23.9, wherein Vdis an Abbe number of the fifth lens.

Wide-angle lens assembly

Growing community of inventors

Hsinchu, Taiwan

Yu-Min Chang