Canon Kabushiki Kaisha

Yu Maehashi

Takeshi Ichikawa

Akira Okita

Yosuke Nishide

Kazuhiro Saito

Hiroki Hiyama

Tetsuya Itano

Kohichi Nakamura

Masahiro Kobayashi

Koichiro Iwata

Katsuyuki Hoshino

Hidekazu Takahashi

Toshiaki Ono

Junji Iwata

Masatsugu Itahashi

Yasuharu Ota

Naoki Inatani

Hideo Kobayashi

Kazuo Yamazaki

Seiichirou Sakai

Kazuhiro Morimoto

Takahiro Yamasaki

Tomoya Sasago

Shintaro Maekawa

Takayuki Suzuki

Takeshi Akiyama

Hiroshi Sekine

Yasushi Matsuno

Hiroaki Kameyama

Yoshiyuki Hayashi

Hiromasa Tsuboi

Yasuji Ikeda

A photoelectric conversion device includes a substrate, a photoelectric conversion unit arranged in the substrate and configured to generate charges corresponding to incident light, and a pixel isolation portion arranged in the substrate and isolating the photoelectric conversion unit from other elements. A sidewall of the pixel isolation portion has a plurality of depressions and protrusions in a cross-sectional view. A period of at least a part of the plurality of depressions and protrusions is greater than ½ of a wavelength of light to which the photoelectric conversion unit has sensitivity.

Photoelectric conversion device having a semiconductor region arranged in a substrate and having a plurality of regions along a surface of the substrate

An apparatus includes a plurality, of avalanche diodes disposed in a layer having a first surface and a second surface opposite the first surface, wherein the plurality of avalanche diodes each includes a first region of first conductivity type located at a first depth, a second region of second conductivity type located at a second depth greater than the first depth with respect to the second surface, and a third region of the second conductivity type located at a third depth greater than the second depth with respect to the second surface, wherein the layer includes a plurality of structures disposed in the first surface, and wherein the plurality of structures has an effective period less than hc/E(h: Planck's constant [J·s], c: speed of light [m/s], and E: a band gap of a substrate [J].

Photoelectric conversion apparatus

An imaging display device includes an imaging unit, a processing unit, a display unit, and a pupil detection unit. The imaging unit includes a plurality of photoelectric conversion elements and is configured to acquire first image information. The processing unit is configured to process a signal from the imaging unit and generate second image information. The display unit is configured to display an image that is based on the signal from the processing unit. The pupil detection unit is configured to detect vector information of a pupil. The processing unit generates the second image information by processing the first image information based on the vector information on the pupil.

Imaging display device and wearable device

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

Image capturing and display apparatus and wearable device

A signal processing device includes a plurality of pixel signal processing units and a signal line group. The plurality of pixel signal processing units is arranged in a first direction and a second direction, each of the plurality of signal processing units acquiring a digital signal having a plurality of bits based on an output from a corresponding avalanche photodiode. The signal line group is arranged corresponding to the plurality of pixel signal processing units arranged in the first direction and including a signal line to which a plurality of signals corresponding to a plurality of bits of different digits of the digital signal held in each of the plurality of pixel signal processing units arranged in the first direction are commonly output.

Signal processing device having photodiode

A photoelectric conversion apparatus includes a first substrate including a plurality of avalanche photodiodes, a second substrate including a plurality of pixel circuits, and a third substrate including a signal processing circuit, wherein the second substrate and the third substrate are stacked in such a manner that a third wiring structure is disposed between two semiconductor layers included in the second substrate and the third substrate, with a first through wire penetrating through the semiconductor layer included in the third substrate is disposed.

Photoelectric conversion apparatus, photoelectric conversion system, and movable body

Signal processing device having counter counting pulses from avalanche photodiode

A display element includes a shield line disposed between adjacent ones of signal lines that transmit a digital signal from a latch unit to a plurality of digital-to-analog converters.

Display element, display apparatus, and image pickup apparatus

A photoelectric conversion device includes a plurality of pixels, a data line, and a receiving circuit. Each of plurality of pixels includes a photoelectric conversion unit, a processing circuit, and a pixel output circuit. The photoelectric conversion unit includes an avalanche photodiode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputs a signal in accordance with the incident of photon. The processing circuit processes a signal output from the photoelectric conversion unit. The pixel output circuit controls an output of the signal processed by the processing circuit. The data line is connected to the plurality of pixels. The receiving circuit receives a pixel signal output from the plurality of pixels via the data line. An off-state leakage current of the transistor included in the receiving circuit is smaller than an off-state leakage current of the transistor included in the pixel output circuit.

Photoelectric conversion device and photodetection system having avalanche photodiode

An image capturing apparatus includes a plurality of photoelectric conversion elements, a first selection unit, and a second selection unit. Each of the photoelectric conversion elements includes an avalanche diode and a counter. The photoelectric conversion elements have a first photoelectric conversion element and a second photoelectric conversion element. The first selection unit controls the first photoelectric conversion element. The second selection unit controls the second photoelectric conversion element. The first and second selection units are controlled by a first control line and a second control line. In a first mode, the second selection unit controls the second photoelectric conversion element to be brought into a state where no signal is read from the second photoelectric conversion element. In a second mode, the second selection unit controls the second photoelectric conversion element to be brought into a state where a signal is read from the second photoelectric conversion element.

Image capturing apparatus, image capturing system, and moving body

A photoelectric conversion device includes a plurality of pixels arranged in an array to form a plurality of rows and a plurality of columns. Each of the plurality of pixels includes a photon detection element that outputs an output signal generated by avalanche multiplication in accordance with incidence of a photon, a quench element connected to the photon detection element, a waveform shaper that is connected to the photon detection element and generates a detection signal based on the output signal, and a signal processing circuit that performs signal processing on the detection signal output from the waveform shaper. The signal processing circuit includes a counting unit that performs a counting process of counting the detection signal output from the waveform shaper, and a calculation unit that performs a predetermined calculation process on a count result output from the counting unit.

Photoelectric conversion device

Growing community of inventors

Yokohama, Japan

Yu Maehashi