Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Yu-Lun Lu

Kong-Beng Thei

Ming Chyi Liu

Chien-Chih Chou

Wei-Han Lai

Yu-Chang Jong

Tsung-Chieh Tsai

Ta-Wei Lin

Jhih-Bin Chen

Hung-Shu Huang

Jhu-Min Song

Fu-Hsiung Yang

Jen-Huang Huang

Li-Hsuan Yeh

Tsung-chieh Tsai

Yi-Kai Ciou

Ching-Hsun Hsu

A semiconductor structure and forming method thereof are provided. A substrate includes a first region, a second region, and a boundary region defined between the first region and the second region. An isolation structure is disposed in the boundary region. An upper surface of the isolation structure has a stepped profile. A first boundary dielectric layer and a second boundary dielectric layer are disposed over the isolation structure. The first boundary dielectric layer is substantially conformal with respect to the stepped profile of the isolation structure.

Semiconductor structure and forming method thereof

A perfusion cell culture device includes a driving module and a plurality of cell culture modules. The driving module includes a driving source connecting opening and a chamber. The chamber and the driving source connecting opening are connected. Each of the culture modules includes a fluid channel, a first elastic element, two flow direction controlling units and a cell culture zone. The fluid channel is disposed above the chamber, the first elastic element is disposed between the fluid channel and the chamber, the two flow direction controlling units are respectively disposed on two ends of the fluid channel and connected to the fluid channel selectively, and the cell culture zone is connected to the two flow direction controlling units.

Perfusion cell culture device and perfusion cell culture system

A semiconductor structure is provided. The semiconductor structure includes a substrate, a diode region, and a dummy stripe. The substrate has a first surface. The diode region is in the substrate. The diode region includes a first implant region of a first conductivity type approximate to the first surface, and a second implant region of a second conductivity type approximate to the first surface and surrounded by the first implant region. The dummy stripe is on the first surface and located between the first implant region and the second implant region. A method for manufacturing a semiconductor structure is also provided.

Semiconductor structure and method for manufacturing thereof

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Hsinchu, Taiwan

Yu-Lun Lu