Ili Technology Corporation

Yu-Lun Lu

Jing-Chi Yu

Chung-Wei Wang

Wei-Yao Lin

Kuo-Ko Chen

A semiconductor device includes an n-type first doped region for receiving an external voltage, an n-type second doped region and a p-type third doped regions all formed in a p-type substrate, and is configured to have a first threshold voltage for forward conduction between the first and second doped regions, and a second threshold voltage for forward conduction between the first and third doped regions. A current is drained by flowing through the first doped region, the substrate and the second doped region if the external voltage is greater than the first threshold voltage or by flowing through the third doped region, the substrate and the first doped region if the external voltage is less than the second threshold voltage.

Semiconductor device having two-way conduction characteristics, and electrostatic discharge protection circuit incorporating the same

A semiconductor device of the present invention comprises: a P type semiconductor substrate, an N-well, a first P+ diffusion region, a second P+ diffusion region, a Schottky diode, a first N+ diffusion region, a second N+ diffusion region, a third P+ diffusion region, a fourth P+ diffusion region, a first insulation layer, a second insulation layer, a first parasitic bipolar junction transistor (BJT), and a second parasitic BJT. The Schottky diode is coupled to an input signal. The first N+ diffusion region and the second N+ diffusion region are coupled to a voltage source, respectively. When a voltage level of the input signal is higher than a voltage level of the voltage source, the Schottky diode conducts charges to make the first parasitic BJT and the second parasitic BJT not conducted.

Growing community of inventors

Zhuangwei Township, Yilan County, Taiwan

Yu-Lun Lu