Tsinghua University

Taiwan Semiconductor Manufacturing Comp. Ltd.

University of California

Yu-Lun Chueh

Tsung-Cheng Chan

Chien-Neng Liao

Jian-Hong Lin

Yung-Huei Lee

Chwei-Ching Chiu

Chun-Lung Huang

Henry Medina

Wei-Sheng Chen

Yu-Ze Chen

Yu-Ting Yen

Fan-Wei Liu

Fan-Gang Tseng

Yu-Sheng Huang

Chia-Jung Chang

Chih-Huang Lai

Ali Javey

Shih-Ming Lin

Wen-Chih Chang

Ming-Chang Lu

Shu-Chi Wu

Chih-Chung Lai

Tzu-Ming Cheng

Yuan-Da Chu

Jian-Guang Li

Teng-Yu Su

Yi-Chen Hsieh

Chi-Hsin Huang

Hung-Wei Tsai

Hsiang-Ying Cheng

Yi-Chung Wang

Kuan-Chun Tseng

Zhiyong Fan

A method for recovering a valuable material from a perovskite solar cell includes immersing a perovskite solar cell device in an organic solvent to dissolve a monovalent metal cation, a divalent metal cation, and two halogen anions in the organic solvent, followed by adding an oxidizing agent and conducting a heating treatment to form a solid phase residue and a halogen molecule, dissolving the halogen molecule in deionized water to form a halogen solution, rinsing the solid phase residue with deionized water to obtain a solid phase and a liquid phase, calcining the solid phase into a metal oxide, or mixing the solid phase with the halogen solution to obtain a first metal halide, subjecting the liquid phase to an extraction treatment to form an oil phase layer, followed by conducting a back-extraction treatment, adding the halogen solution, and conducting a vacuum concentration treatment to obtain a second metal halide.

Method for recovering valuable material from perovskite solar cell

A rechargeable transition metal battery includes a negative electrode, a positive electrode and an electrolyte. The negative electrode includes a negative electrode material which is a transition metal or an alloy of the transition metal. The positive electrode is electrically connected to the negative electrode and includes a host material and a positive electrode material. The host material includes a carbon. The positive electrode material is connected to the host material, and the positive electrode material is a compound of a metal, an elemental chalcogen or an elemental halogen. The electrolyte is disposed between the positive electrode and the negative electrode.

Rechargeable transition metal battery

A method for recovering a resource from a CIGS thin-film solar cell to be recycled includes a) providing the CIGS thin-film solar cell, and b) subjecting the CIGS thin-film solar cell to a cooling treatment at a predetermined temperature, such that a light absorbing unit of the CIGS thin-film solar cell can be recovered due to thermal strain difference of materials of the CIGS thin-film solar cell.

Method for recovering resource from CIGS thin-film solar cell

A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.

Method for forming semiconductor device structure having conductive structure with twin boundaries

A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.

A method of transferring a thin film includes: providing a first element structure, wherein the first element structure includes a first substrate and a functional film layer formed on the first substrate; completely removing the first substrate, wherein steps of the completely removing the first substrate includes: conducting an etching step to erode the first substrate, and conducting a grinding step to planarize the eroded first substrate; and after completely removing the first substrate, attaching the functional film layer on a second substrate to form a second element structure.

Method of transferring thin film

A working fluid in cooperation with a solar thermal system comprises a heat conduction medium and a plurality of metal particles mixed in the heat conduction medium. Each of the metal particles includes a metal particle and a protection layer, and the protection layer is an oxide and covers the metal particle. A manufacturing method of metal particles is also disclosed.

Working fluid and manufacturing method of metal particles

A method of fabricating transition metal dichalcogenides includes a preparing step, a steaming step and a depositing step. The preparing step is performed for providing a transition metal substrate, a reactive gas and a solid chalcogenide. The steaming step is performed for heating the solid chalcogenide to generate a chalcogenide gas in a steaming space. The depositing step is performed for introducing the reactive gas into the chalcogenide gas to ionize the chalcogenide gas so as to generate a chalcogenide plasma in a depositing space. The depositing step is performed under a process vacuum pressure from low vacuum pressure to atmospheric pressure. The reactive gas and the chalcogenide gas are flowed from top to bottom through a top of the transition metal substrate. The loading substrate is heated at a loading substrate temperature, and the steaming space is different from the depositing space.

Method of fabricating transition metal dichalcogenide

A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 &#x3bc;mto about 250 &#x3bc;m.

Interconnect structure with twin boundaries and method for forming the same

A manufacturing method of a two-dimensional transition-metal chalcogenide thin film includes providing a substrate, providing a reaction film, providing a source and providing a microwave. The substrate is made of material having dipole moments. The reaction film, disposed on the substrate, has a predefined thickness and includes a transition-metal compound. The source includes S, Se, or Te. The substrate is heated by the microwave to produce a heat energy to the reaction film and the source; thus a chemical reaction takes place and the two-dimensional transition-metal chalcogenide thin film is formed on the substrate. The two-dimensional transition-metal thin film includes a plurality of elements, and each of the elements aligns along a predefined direction by controlling a value of the predefined thickness.

Manufacturing method of two-dimensional transition-metal chalcogenide thin film

A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure.

Resistive random access memory

A filtering film structure includes a film, a conductive layer and a dielectric layer. The film includes a plurality of holes. The conductive layer is disposed on the inner surface of the holes, and the dielectric layer is disposed on the conductive layer. When applying a voltage to the conductive layer, an electrical charge layer forms on the surface of the dielectric layer.

Filtering film structure

The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.

Method for preparing nano-sheet array structure of group V-VI semiconductor

A method of fabricating a 3-dimensional structure on a copper-indium-gallium-diselenide material comprises steps: preparing a CIGS (Copper Indium Gallium Diselenide) substrate, and defining two types of regions complementary to each other on the CIGS substrate; providing a mold absorbing an etching solution that can etch the CIGS substrate instead of the mold; aligning the mold to the two types of regions, and allowing the etching solution to flow out from the mold and contact with the two types of regions to etch the two types of regions for generating a level drop between the two types of regions and forming a 3-dimensional (3D) structure on the CIGS substrate. As a result, the present invention can fabricate a large-area 3D structure on a CIGS substrate rapidly without using expensive equipments or complicated processes.

Method of fabricating 3D structure on CIGS material

Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (&#x2dc;4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (&#x3c;1%) is observed, even for high angles of incidence (&#x2dc;75&#xb0;) and for relatively short nanoneedle lengths (&#x2dc;1 &#x3bc;m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of &#x2dc;1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

Growing community of inventors

Hsinchu, Taiwan

Yu-Lun Chueh