Epistar Corporation

Sagabio Co., Ltd.

Can Heal Biomeditech Corp.

Yu-Ling Lin

Chao-Hsing Chen

Bo-Jiun Hu

Jia-Kuen Wang

Wen-Hung Chuang

Tzu-Yao Tseng

Tsung-Hsun Chiang

Chien-Fu Shen

Tsun-Kai Ko

Kuan-Yi Lee

Chien-Chih Liao

I-Lun Ma

Kuang-Wen Liao

Ting-Yan Jian

Chi-Shiang Hsu

Meng-Hsiang Hong

Yen-Liang Kuo

Yong-Yang Chen

Yen-Ku Liu

Ching-Yi Lin

Chien-Ya Hung

Xue-Cheng Yao

A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.

Light-emitting device

A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

Semiconductor light-emitting device

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a lateral outer perimeter surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; a first pad portion and a second pad portion formed on the semiconductor stack to respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the second pad portion and the first pad portion are arranged in a first direction; wherein the plurality of vias is arranged in a plurality of rows, the plurality of rows are arranged in the first direction and includes a first row and a second row, the first row is covered by the second pad portion, the second row is not covered by the first pad portion and the second pad portion, wherein a spacing between two adjacent vias in the first row is different from a spacing between two adjacent vias in the second row.

A semiconductor light-emitting device includes a substrate; a first semiconductor layer and a second semiconductor layer formed on the substrate, wherein the first semiconductor layer includes a first exposed portion and a second portion; a plurality of first trenches formed on the substrate and including a surface composed by the first exposed portion; a second trench formed on the substrate and including a surface composed by the second exposed portion at a periphery region of the semiconductor light-emitting device, wherein each of the plurality of first trenches is branched from the second trench; and a patterned metal layer formed on the second semiconductor layer and including a first metal region and a second metal region, and portions of the second metal region are formed in the plurality of first trenches and the second trench to electrically connect to the first exposed portion and the second exposed portion.

A light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a trench formed between the first light-emitting unit and the second light-emitting unit, and exposing the substrate; and a connecting electrode including a first connecting part on the first light-emitting unit and connected to the first semiconductor layer of the first light-emitting unit, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.

The present invention relates to a monoclonal antibody that inhibits immunosuppressive functions of pathogens, antigen-binding fragment thereof, and hybridomas producing such antibody. The monoclonal antibody or antigen-binding fragment thereof bind to a peptide consisting an amino acid sequence represented by MEKVGKDGVITVE (SEQ ID NO: 1). The present invention also discloses use of the invented monoclonal antibody or antigen-binding fragment thereof, and method of preparation for such hybridomas.

Monoclonal antibody inhibiting immunosuppressive functions of pathogens, antigen-binding fragment thereof, and hybridomas producing such antibody

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

Growing community of inventors

Hsinchu, Taiwan

Yu-Ling Lin