E Ink Holdings Inc.

Yu-Lin Hsu

Wen-Chung Tang

Po-Wei Chen

Kuan-Yi Lin

Yu-Wen Chen

Chun-Yu Lu

Yu-Chieh Hung

Kuo-Hsing Cheng

Cheng-Hao Lee

Yung-Sheng Chang

Yi Jiun Wu

A display panel and a manufacturing method thereof are provided. The display panel includes a substrate, an active element, a driving circuit element, a first connection circuit, a second connection circuit and a conductive connector. The substrate has a first surface and a second surface opposite to the first surface. The active element is disposed on the first surface. The driving circuit element is disposed on the second surface and is overlapped with the active element. The first connection circuit is disposed on the first surface and is connected to the active element. The second connection circuit is disposed on the second surface and is connected to the driving circuit element. The conductive connector penetrates through the substrate and two ends of the conductive connector are electrically connected to the first connection circuit and the second connection circuit, respectively.

Display panel and manufacturing method thereof

An organic thin film transistor includes a substrate, a source/drain layer that is located on the substrate and has a source region and a drain region, a first buffer layer that is located between the source region and the drain region, a semiconductor layer that is located on the source/drain layer and the first buffer layer, a gate insulating layer, and a gate electrode. The first buffer layer covers at least one portion of the source region and at least one portion of the drain region. The first buffer layer is located among the semiconductor layer, the source region, the drain region, and the substrate. The gate insulating layer covers the source/drain layer and the semiconductor layer. The gate electrode is located on the gate insulating layer, and a portion of the gate insulating layer is located between the gate electrode and the semiconductor layer.

Organic thin film transistor

An organic thin film transistor includes a drain electrode, a semiconductor layer, a source electrode, a gate insulator, and a gate electrode. A horizontal portion and a vertical portion of the semiconductor layer are respectively located on a top surface and an end surface of the drain electrode, and the drain electrode protrudes from the horizontal portion in a first direction. The source electrode is disposed along a surface of the semiconductor layer. The source electrode has an extending portion that extends in a second direction opposite to the first direction. The gate insulator is disposed along a top surface and two side surfaces of a stacked structure defined by the drain electrode, the semiconductor layer, and the source electrode. The gate electrode is located on the gate insulator, and a portion of the gate insulator is between the stacked structure and the gate electrode.

Display device and organic thin film transistor including semiconductor layer having L-shaped cross-section

A flexible display device includes a flexible substrate, an inorganic barrier layer, a metal layer, an organic buffer layer, and an insulating layer. The inorganic barrier layer is located on the flexible substrate. The metal layer is located on the inorganic barrier layer and in contact with the inorganic barrier layer. The organic buffer layer covers the inorganic barrier layer and the metal layer, and has at least one conductive via connected to the metal layer. The insulating layer is located on the organic buffer layer.

Flexible display device

Growing community of inventors

Hsinchu, Taiwan

Yu-Lin Hsu