Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Mstar Semiconductor, Inc.

National Cheng-Kung University

Yu-Lin Chen

Chia-Fu Lee

Yu-Der Chih

Meng-Fan Chang

Yi-Chun Shih

Po-Hao Lee

Chung-Ching Chen

Hsian-Feng Liu

Harry-Hak-Lay Chuang

Tien-Wei Chiang

Wen-Chun You

Yen-An Chang

In-Gann Chen

Tien-Fu Chen

Yi-Chieh Chiu

Chang-Hung Chen

Keng-Hao Yang

Chii-Shyang Hwang

Chia-Yin Li

Jian-Cheng Huang

A memory device for CIM has a memory array including a plurality of memory cells arranged in an array of rows and columns. The memory cells have a first group of memory cells and a second group of memory cells. Each row of the array has a corresponding word line, with each memory cell of a row of the array coupled to the corresponding word line. Each column of the array has a corresponding bit line, with each memory cell of a column of the array coupled to the corresponding bit line. A control circuit is configured to select the first group of memory cells or the second group of memory cells in response to a group enable signal.

Compute in memory (CIM) memory array

Memory devices and methods of repairing a memory are provided. A first array includes normal memory cells, and a second array includes repair memory cells. The repair memory cells are configured to be used in place of the normal memory cells. A look-up table comprises memory bitcells configured to store a set of entries including addresses of defective memory cells of the normal memory cells. A match circuit is configured to evaluate whether an input memory address is stored as a defective address in the memory bitcells. The match circuit is also configured to generate a selection signal for selecting the normal memory cells or the repair memory cells based on the evaluation.

Memory repair scheme

Various embodiments of the present application are directed towards a one-time-programmable (OTP) implementation using magnetic junctions. In some embodiments, an array comprises multiple magnetic junctions in multiple columns and multiple rows, and the magnetic junctions comprise a first magnetic junction and a second magnetic junction. The first and second magnetic junctions comprise individual top ferromagnetic elements and individual bottom ferromagnetic elements, and further comprise individual barrier elements between the top and bottom ferromagnetic elements. A first barrier element of the first magnetic junction electrically separates first top and bottom ferromagnetic elements of the first magnetic junction. A second barrier element of the second magnetic junction has undergone breakdown, such that it has defects defining a leakage path between second top and bottom ferromagnetic elements of the second magnetic junction. The broken-down state corresponds to a one-time programmed state and is not susceptible to high-temperature change, even at small sizes.

One-time-programmable (OTP) implementation using magnetic junctions

The present disclosure provides a memory apparatus including a memory cell array, a plurality of sense amplifiers, at least one first comparing circuit, and a plurality of second comparing circuit. The memory cell array includes a plurality of memory cells. Each of the sense amplifier generates a data signal and an inverted data signal according to a bit line signal and an inverted bit line signal. The first comparing circuits compares the data signals of first and second sense amplifiers with a first tag to generate a first comparing result. The second comparing circuits respectively compare a plurality of second tags with the data signals of the sense amplifiers to respectively generate a plurality of second comparing results.

Memory apparatus

The present disclosure provides a sense amplifier. The sense amplifier includes a first inverting circuit, a second inverting circuit, a capacitor, and a write-back path circuit. The first inverting circuit has a first input end and a first output end, and the first input end receives a first bit line signal from a memory cell. The second inverting circuit has a second input end and a second output end, wherein the second input is coupled to the first output end, and the second output end is coupled to the first input end, and the second input end receives a second bit line signal from the memory cell. The capacitor receives a boost signal and generates a boosted voltage according to the boost signal during a write-back timing period. The write-back path circuit transports the boosted voltage to one of the first and second input ends during the write-back timing period.

Sense amplifier

A DRAM controller including a judging module, a determination module, and a transmission module is provided. The judging module judges an address content difference between a first command and a third command. The determination module determines a plurality of buffering address contents, associated with at least one second command, according to the address content difference. The transmission module then sequentially transmits the first command, the at least one second command, and the third command to the DRAM.

Control method and controller for DRAM

A built-in self-test circuit (BIST) applied to a high speed I/O port is provided. The BIST circuit includes a detecting unit, a flag unit and a selecting unit. The detecting unit has a first input terminal for receiving a serial output signal, a second input terminal for receiving a serial enable signal, and an output terminal for generating a detection signal. The flag unit receives the detection signal and generates a flag signal. The selecting unit receives the serial output signal, the serial enable signal and the flag signal. When a reset signal is at a first level, the selecting unit transmits the serial output signal and the serial enable signal to the I/O port. When the reset signal is at a second level, the serial output signal and the serial enable signal possesses a predetermined relationship.

Built-in self-test circuit applied to high speed I/O port

The present invention pertains to a process for synthesizing nano-scale yttrium aluminum garnet (YAG) fluorescent powders having formula (I):(YR)(AlR)O&#x2003;&#x2003;(I)wherein Rand Rare independently selected from the elements consisting of rare earth metals and transition metals, and each of x and y is independently a value between 0 and 1.5, where the process comprises the steps:

Process for producing nanoscale yttrium aluminum garnet (YAG) fluorescent powders

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Hsinchu, Taiwan

Yu-Lin Chen