Marvell Asia Pte., Ltd.

Yu Li

Masaki Kato

Xiaoguang Tu

A germanium-on-silicon avalanche photodetector includes a silicon device layer of a silicon-on-insulator substrate having a central region characterized by modest-heavy n+ doping state between a first electrode region and a second electrode region in heavy n++ doping state; a first sub-layer of the central region modified to nearly neutral doping state and located from a first depth down to a second depth below a top surface of the silicon device layer; a second sub-layer of the central region modified to modest p doping state embedded from the top surface down to the first depth to interface with the first sub-layer; a layer of germanium with a bottom side attached to the top surface of the second sub-layer; and a third sub-layer embedded into a top side of the layer of germanium, characterized by heavy p++ doping state.

Germanium-on-silicon avalanche photodetector in silicon photonics platform, method of making the same

A silicon photonics integration circuit includes a silicon substrate member; a RX sub-circuit formed in the silicon substrate member including multiple RX-input ports each having a mode size converter configured to receive an incoming light signal into one of multiple waveguides and multiple RX photo detectors coupled respectively to the multiple waveguides; and a TX sub-circuit formed in the silicon substrate member including one or more TX-input ports each having a mode size converter coupled to a first TX photo detector into one input waveguide, one or more 1×2 directional couplers each coupled between the input waveguide and two mod-input waveguides, multiple modulators coupled between respective multiple mod-input waveguides and multiple mod-output waveguides each being coupled to a second TX photo detector into one of multiple output waveguides, and multiple TX-output ports each having a mode size converter coupled to respective one of the multiple output waveguides.

Silicon photonics integration circuit

A silicon photonics integration circuit includes a silicon substrate member; a RX sub-circuit formed in the silicon substrate member including multiple RX-input ports each having a mode size converter configured to receive an incoming light signal into one of multiple waveguides and multiple RX photo detectors coupled respectively to the multiple waveguides; and a TX sub-circuit formed in the silicon substrate member including one or more TX-input ports each having a mode size converter coupled to a first TX photo detector into one input waveguide, one or more 1&#xd7;2 directional couplers each coupled between the input waveguide and two mod-input waveguides, multiple modulators coupled between respective multiple mod-input waveguides and multiple mod-output waveguides each being coupled to a second TX photo detector into one of multiple output waveguides, and multiple TX-output ports each having a mode size converter coupled to respective one of the multiple output waveguides.

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Santa Clara, CA, United States of America

Yu Li