Chinese Academy of Sciences

Yu Lei

Zhitang Song

Houpeng Chen

Jun Zhou

Xi Li

Qian Wang

Haibo Zhang

Bing He

Zhijun Yuan

Menghao Wu

Yunfeng Qi

Ren Ye

A device for realizing the splicing of an array fiber and a large-size quartz end cap comprises a carbon dioxide laser, a light splitter, a light beam shaper, a high reflectivity mirror, an image detection module, an array fiber and a carrier thereof, a large-size quartz end cap and a carrier thereof, a stepping motor, a thermodetector, and a computer; a laser beam emitted by the carbon dioxide laser is divided into two light beams through a light splitter, after the two light beams respectively pass through the beam shaper and the high reflectivity mirror, two strip-shaped light spots with uniform power density are integrally formed to heat a splicing face of the large-size quartz end cap, a uniform temperature field of a target splicing area is achieved through indirect heating and heat conduction.

Device and method for splicing array optical fiber with large-size quartz end cap

A read-out circuit and a read-out method for a three-dimensional memory, comprises a read reference circuit and a sensitive amplifier, the read reference circuit produces read reference current capable of quickly distinguishing reading low-resistance state unit current and reading high-resistance state unit current. The read reference circuit comprises a reference unit, a bit line matching module, a word line matching module and a transmission gate parasitic parameter matching module. With respect to the parasitic effect and electric leakage of the three-dimensional memory in the plane and vertical directions, the present invention introduces the matching of bit line parasite parameters, leakage current and transmission gate parasitic parameters into the read reference current, and introduces the matching of parasitic parameters of current mirror into the read current, thereby eliminating the phenomenon of pseudo reading and reducing the read-out time.

Read-out circuit and read-out method for three-dimensional memory

A read circuit of storage class memory comprises: an array; a read reference circuit, having the same bit line parasitic parameters as the array, having the same read transmission gate parasitic parameters as the array, used to generate a read reference current; a sense amplifier, providing the same current mirror parasitic parameters as the reference side, used to generate a read current from a selected memory cell, compare the said read current with the said read reference current and output a readout result. In the present invention, the said read current and the said read reference current are generated at the same time, the transient curve of the said read reference current is between the low resistance state read current and the high resistance state read current from an early stage. The present invention largely reduces the read access time, has a good process variation tolerance, has a wide application, and is easy to be used in the practical product.

Read circuit of storage class memory with a read reference circuit, having same bit line parasitic parameters and same read transmission gate parasitic parameters as memory

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Shanghai, China

Yu Lei