Samsung Electronics Co., Ltd.

Yu-Kyung Kim

Jeong-Nam Han

Woo-Gwan Shim

Chang-ki Hong

Im-Soo Park

Chang-Sup Mun

Hyung-Ho Ko

Doo-Won Kwon

Sang-jun Choi

Kun-Tack Lee

The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.

Methods of forming semiconductor devices formed by processes including the use of specific etchant solutions

This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.

Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture

A sacrificial layer and wet etch are used to form a sidewall spacer so as to prevent damage to the structure on which the spacer is formed and to the underlying substrate as well. Once the structure is formed on the substrate a spacer formation layer is formed to cover the structure, and a sacrificial layer is formed on the spacer formation layer. The sacrificial layer is wet etched to form a sacrificial layer pattern on that portion of the spacer formation layer extending along a sidewall of the structure. The spacer is formed on the sidewall of the structure by wet etching the spacer formation layer using the sacrificial layer pattern as a mask.

Method of forming a spacer

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Busan, South Korea

Yu-Kyung Kim