Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Yu Kumagai

Fumiyasu Oba

Ryosuke Kikuchi

Hideo Hosono

Hideya Kumomi

Isao Tanaka

Kazuhito Hato

Toru Nakamura

Takahiro Kurabuchi

Hidenori Hiramatsu

Soshi Iimura

Yoshinori Muraba

Lee Alan Burton

Yoyo Hinuma

Taisuke Matsui

Koki Ueno

Tomoyasu Yokoyama

Yasushi Kaneko

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.

Solar cell

The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZnNand a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZnN.

Multi-junction light energy conversion element, device comprising the same, and fabrication method of SnZn2N2

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZnNor the chemical formula XZnNwherein Xis Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Zinc nitride compound and method for producing same

The present disclosure provides a light energy conversion element in which a material having a bandgap suitable for a light energy conversion layer is used. The light energy conversion element according to the present disclosure comprises a light energy conversion layer containing BaBiShaving a hexagonal crystal structure.

Light energy conversion element and device comprising the same

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Kanagawa, Japan

Yu Kumagai