Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Yu-Ku Lin

Ying-Lang Wang

Kei-Wei Chen

Jung-Chih Tsao

Li-Yen Fang

Shih-Tzung Chang

Shiu-Ko JangJian

Ting-Chun Wang

Yao-Hsiang Liang

Chih-Nan Wu

Shih-Ho Lin

Chun-Che Lin

Shih-Chieh Chang

Chun-Chang Chen

Tong-Hua Kuan

Yu-Ting Lin

Hsi-Kuei Cheng

Chun Che Lin

Jun-Nan Nian

Chih-Chang Huang

Po-Jen Shih

Chao-Lung Chen

Hway-Chi Lin

Yi-Lang Wang

Wen-Pin Chang

Chen-Hua Douglas Yu

Chung-Shi Liu

Shau-Lin Shue

Chi-Wen Liu

Dian-Hau Chen

Huai-Tei Yang

Ching-Hwanq Su

Yu-Sheng Wang

Chyi Shyuan Chern

Shih-Chi Lin

Lin-June Wu

Sheng-Wen Chen

Hung Jui Chang

Kuo-Hsiu Wei

Chin Kun Lan

Jowei Dun

Kwang-Ming Lin

Tao Cheng

Hui-Ling Wang

Chin-Nan Wu

Chin-Te Huang

Ken-Shen Chou

Shiu-Ko Jang Jian

Ming-Wen Chen

Ying-Jing Lu

Jiun-Pyng You

Ming-Jer Lee

Shang-Chin Sung

Ching-Hwan Su

Chung-Chang Chen

Jchung-Chang Chen

Chun-Tse Lin

Ting-Chu Wang

Aaron Cheng

Jin-Kuen Lan

Wen-Hsin Huang

Ming-Jei Lee

An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The photo sensitive regions are in the semiconductor substrate. The dielectric layer is over a backside surface of the semiconductor substrate. The grid structure is over a backside surface of the dielectric layer. The grid structure includes a plurality of grid lines. Each of the grid lines comprises a lower portion and an upper portion forming an interface with the lower portion. The convex dielectric lenses are alternately arranged with the grid lines over the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are higher than an interface between the upper portion and the lower portion of each of the grid lines.

Image sensor device

An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The plurality of photo sensitive regions are in the semiconductor substrate. The dielectric layer is on a backside surface of the semiconductor substrate facing away from the plurality of photo sensitive regions. The grid structure is on a backside surface of the dielectric layer facing away from the semiconductor substrate. The grid structure includes a plurality of grid lines spaced from each other. The plurality of convex dielectric lenses are alternately arranged with the plurality of grid lines of the grid structure on the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are lower than top ends of the plurality of grid lines of the grid structure.

A method of manufacturing a semiconductor structure includes receiving a substrate including a first side and a second side opposite to the first side; forming a recess extending between the first side and the second side; and disposing a conductive material in the recess to form a conductive via, wherein the conductive via includes an interface, a first portion adjacent to the first side and a second portion adjacent to the second side, the interface is disposed between the first portion and the second portion, an average grain size of the first portion is substantially different from an average grain size of the second portion.

Method of manufacturing semiconductor structure

An image sensor device includes a substrate, a pixel circuit, a dielectric structure, a photo sensitive element, a grid, and a convex dielectric lens. The substrate has a first side and a second side opposite to the first side. The pixel circuit is disposed on the first side of the substrate. The dielectric structure is disposed on the second side of the substrate. The photo sensitive element is disposed between the pixel circuit and the dielectric structure. The grid is disposed on the dielectric structure. The convex dielectric lens is disposed on the dielectric structure. The convex dielectric lens has a convex side. A topmost of the convex side is above an interface between the dielectric structure and the grid.

Image sensor device and fabricating method thereof

An image sensor device includes a substrate, a photo sensitive element, a first dielectric structure and a convex dielectric lens. The substrate has a first side and a second side opposite to the first side. The photo sensitive element is formed on the first side of the substrate for receiving incident light transmitted through the substrate. The first dielectric structure is formed on the second side of the substrate. At least one portion of the convex dielectric lens is located in the first dielectric structure. The convex dielectric lens has a convex side oriented toward the incident light and a planar side oriented toward the photo sensitive element.

A semiconductor structure includes a substrate including a first side, a second side opposite to the first side, and a device layer over the second side, and a conductive via extending through the substrate, and including a first portion adjacent to the first side and a second portion adjacent to the device layer, wherein the conductive via includes an interface between the first portion and the second portion, an average grain size of the first portion is substantially different from an average grain size of the second portion.

Semiconductor structure and manufacturing method thereof

A semiconductor device includes a substrate, a dielectric structure, a barrier layer, a glue layer, a copper seed layer and a copper layer. The dielectric structure is disposed over the substrate. The dielectric structure has a through via hole passing through the dielectric structure, and a sidewall of the through via hole includes at least one indentation. The barrier layer conformally covers the sidewall and a bottom of the through via hole. The glue layer conformally covers the barrier layer. The copper seed layer conformally covers the glue layer. The copper layer covers the copper seed layer and fills the through via hole.

Through via structure for step coverage improvement

The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing a substrate with a dielectric disposed thereon, wherein the dielectric has a recess formed by a plurality of exposed surfaces; forming a conductive film on the plurality of exposed surfaces; applying a surface agent to the recess so that the surface agent adheres to a portion of the conductive film; immersing the substrate into an electroplating solution comprising metallic ions; and applying a bias to the conductive film in order to fill metallic material in the recess.

Method of manufacturing semiconductor device with recess

The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface, a plurality of sensor elements disposed at the front surface of the substrate. Each of the plurality of sensor elements is operable to sense radiation projected towards the back surface of the substrate. The image sensor also includes a high-k dielectric grid disposed over the back surface of the substrate. The high-k dielectric grid has a high-k dielectric trench and sidewalls. The image sensor also includes a color filter and a microlens disposed over the high-k dielectric grid.

Semiconducator image sensor having color filters formed over a high-K dielectric grid

This description relates to a sensing product formed using a substrate with a plurality of epi-layers. At least a first epi-layer has a different composition than the composition of a second epi-layer. The sensing product optionally includes at least one radiation sensing element in the second epi-layer and optionally an interconnect structure over the second epi-layer. The sensing product is formed by removing the substrate and all epi-layers other than the second epi-layer. A light incident surface of the second epi-layer has a total thickness variation of less than about 0.15 &#x3bc;m.

Sensing product and method of making

Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece having a front side and a back side opposite the front side. An integrated circuit is formed on the workpiece, and a first insulating material is formed on the back side of the workpiece. A second insulating material is formed over the first insulating material. The second insulating material is patterned to form a grid on the back side of the workpiece.

Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods

A system and method for forming a semiconductor device is provided. An embodiment comprises forming a silicide region on a substrate along with a transition region between the silicide region and the substrate. The thickness of the silicide precursor material layer along with the annealing conditions are controlled such that there is a larger ratio of one atomic species within the transition region than another atomic species, thereby increasing the hole mobility within the transition region.

Semiconductor device and method of formation

A method including providing a semiconductor substrate in a reaction chamber; flowing a first reactant including silicon and oxygen, a boron dopant and a phosphorus dopant into the reaction chamber so that a layer of BPTEOS is deposited on the semiconductor substrate; stopping the flow of the first reactant, boron dopant and phosphorus dopant into the reaction chamber and so that a phosphorus dopant and boron dopant rich film is deposited over the layer of BPTEOS; and reducing the film comprising exposing the film to an Oplasma.

Oxygen plasma reduction to eliminate precursor overflow in BPTEOS film deposition

Growing community of inventors

Tainan, Taiwan

Yu-Ku Lin