Sony Corporation

Sony Semiconductor Solutions Corporation

Yu Kato

Nobuyuki Matsuzawa

Yoshiaki Obana

Ichiro Takemura

Shintarou Hirata

Masaki Murata

Hideaki Mogi

Masakazu Muroyama

Masashi Bando

Yasuharu Ujiie

Hideyuki Kumita

Masato Kanno

Miki Kimijima

Yuya Kumagai

Sae Miyaji

Katsuya Kita

Sachiko Sakaigawa

Yuta Inaba

Mutsuhiro Oomori

An organic EL device is constructed with a structure that can prevent deterioration in characteristics. An organic EL device is provided that includes at least two or more subpixels each including an organic compound layer including at least a light-emitting layer that emits light of a different color from the other light-emitting layer(s), the organic compound layer being interposed between a first electrode and a second electrode in a stacking manner, the subpixels being disposed separately from one another on a plane perpendicular to a direction of the stacking. Lateral surfaces of the organic compound layers are covered with films differing from subpixel to subpixel. This structure can prevent the organic EL device from deterioration in characteristics.

Organic EL device and method for manufacturing organic EL devices

[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

Photoelectric conversion device and imaging apparatus

A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode that are disposed to face each other and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, in which the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative.

Photoelectric conversion element, imaging device, and electronic apparatus to improve photoresponse while maintaining superior wavelenght selectivity of a subphthalocyanine and a subphthalocyanine derivative

There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus

Photoelectric conversion element, imaging device, and electronic apparatus comprising a photoelectric conversion layer having at least a subphthalocyanine or a subphthalocyanine derivative and a carrier dopant

An image processing apparatus which can effectively use a storage circuit provided together with a logic circuit, perform high speed processing, and reduce the power consumption without causing a decline in the performance. The image processing system includes a DRAM for storing image data and a logic circuit, which are provided together on a semiconductor chip. The DRAM is divided into a plurality of DRAM modules, and the divided plurality of DRAM modules are arranged around a logic circuit portion for carrying out graphic drawing processing etc. When the ratio of valid data occupying bit lines in one access increases, the distances from the DRAM modules to the logic circuit portion become uniform, the length of the longest path interconnection can be made shorter comparing with the case of arrangement fixed in one direction, and the overall operating speed can be improved.

Image processing apparatus

Growing community of inventors

Kanagawa, Japan

Yu Kato