Vanguard International Semiconductor Corporation

Tsinghua University

Yu-Kai Wang

Shao-Chang Huang

Chih-Hsuan Lin

Jian-Hsing Lee

Hwa-Chyi Chiou

Li-Fan Chen

Chun-Chih Chen

Ting-You Lin

Karuna Nidhi

Kai-Chieh Hsu

Ta-Jen Yen

Hung-Wei Chen

Ching-Ho Li

Chang-Min Lin

Ching-Wen Wang

Tsung-Yu Huang

Ruei-han Jiang

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate disposed on the semiconductor substrate. The semiconductor device structure also includes a source doped region and a drain doped region on two opposite sides of the gate. The semiconductor device structure further includes a source protective circuit and a drain protective circuit. From a side perspective view, a first drain conductive element of the source protective circuit partially overlaps a first source conductive element of the drain protective circuit.

Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD)

An operating circuit is provided. A first N-type transistor determines whether to create an open circuit between a core circuit and a ground terminal according to the voltage level of a specific node. An electrostatic discharge (ESD) protection circuit is coupled between an input/output pad and the core circuit to prevent an ESD current from passing through the core circuit. The ESD protection circuit includes a detection circuit and a releasing element. The detection circuit determines whether there is an ESD event at the input/output pad and generates a first detection signal according to the detection of the ESD event at the input/output pad. The releasing element provides a release path according to the first detection signal to release the ESD current. A control circuit controls the voltage level of the specific node according to the first detection signal.

Operating circuit having ESD protection function

An electrostatic discharge protection (ESD) circuit is provided for a semiconductor element. The semiconductor element includes first and second drain/source electrodes and is surrounded by a deep well region. The ESD circuit includes a first control circuit and a first discharge circuit. The first control circuit is electrically connected between the first drain/source electrode and a power terminal and includes a first control terminal electrically connected to the deep well region and generates a first control signal. The first discharge circuit is controlled by the first control signal. When an electrostatic discharge event occurs on the first drain/source electrode, the first control circuit generates the first control signal according to potential states of the deep well region and the first drain/source electrode, and the first discharge circuit provides a first discharge path between the first drain/source electrode and the power terminal according to the first control signal.

Electrostatic discharge protection circuits and semiconductor circuits

An ESD protection circuit, which protects a subject NMOS transistor coupled between an I/O pad and a ground, includes a first discharge device arranged between the I/O pad and the ground, having a trigger-on voltage that is lower than a breakdown voltage of the subject NMOS transistor; and a gate voltage control device, including a discharge NMOS transistor coupled to the ground and a gate of the subject NMOS transistor; a first PMOS transistor connected to the gate of the subject NMOS transistor and a connection node; and a first NMOS transistor connected to the connection node and the ground. The connection node is connected to the gate of the discharge NMOS transistor, and the gate of the first PMOS transistor and the gate of the first NMOS transistor are connected to each other.

Electrostatic discharge protection circuit

A micro bandpass filter comprises a substrate, a first signal transmission member, a second signal transmission member and a resonator structure. The resonator structure includes a plurality of microstrip lines. The present invention realizes the function of a bandpass filter in a smaller area via curving the first signal transmission member, the second signal transmission member and the resonator structure.

Micro bandpass filter

Growing community of inventors

Hsinchu, Taiwan

Yu-Kai Wang