Au Optronics Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Acer Display Technology, Inc.

Yu-Kai Lin

Tze-Liang Lee

Su-Jen Sung

Jen-Hung Wang

Po-Cheng Shih

Shing-Chyang Pan

Szu-Ping Tung

Jen Hung Wang

Jr-Hung Li

Po-Cheng Chen

Shen-Hong Chou

Yao-Ching Su

Chih-Kuang Chen

Jiun-Han Wu

Ya-hsien Chang

Chung Peng

Shin-Chin Tseng

Tzeng-Shii Tsai

Ya-Hsien Chang

Semiconductor devices and methods of manufacture are presented herein in which a etch stop layer is selectively deposited over a conductive contact. A dielectric layer is formed over the etch stop layer and an opening is formed through the dielectric layer and the etch stop layer to expose the conductive contact. Conductive material is then deposited to fill the opening.

Semiconductor devices and methods

A semiconductor structure including a substrate, a first dielectric layer, a first conductive feature, an etch stop layer, a second dielectric layer and a second conductive feature is provided. The first dielectric layer is disposed over the substrate. The first conductive feature is disposed in the first dielectric layer. The etch stop layer is disposed over the first dielectric layer and the first conductive feature, wherein the etch stop layer comprises a metal-containing layer and a silicon-containing layer, the metal-containing layer is located between the first dielectric layer and the silicon-containing layer, the metal-containing layer comprises a nitride-containing region and an oxide-containing region, and the nitride-containing region contacts the first conductive feature. The second dielectric layer is disposed over the etch stop layer. The second conductive feature penetrates the second dielectric layer and electrically connects with the first conductive feature.

Semiconductor structure and manufacturing method thereof

A semiconductor device structure is provided. The semiconductor device structure includes a first diffusion barrier layer made of a dielectric material including a metal element, nitrogen, and oxygen and a first protection layer made of a dielectric material including silicon and oxygen and in direct contact with the top surface of the first diffusion barrier layer. The semiconductor device structure also includes a first thickening layer made of a dielectric material including the metal element and oxygen and in direct contact with the top surface of the first protection layer. A maximum metal content in the first thickening layer is greater than that in the first diffusion barrier layer. The semiconductor device structure further includes a conductive feature surrounded by and in direct contact with the first diffusion barrier layer, the first protection layer, and the first thickening layer.

Semiconductor device with multi-layer etch stop structure

A method for forming a semiconductor device structure is provided. The method includes successively forming a first multi-layer etch stop structure and an insulating layer over a first conductive feature. The insulating layer and the first multi-layer etch stop structure are successively etched to form an opening substantially aligned to the first conductive feature. A second conductive feature is formed in the opening. The formation of the first multi-layer etch stop structure and the second multi-layer etch stop structure includes forming a first metal-containing dielectric layer, forming a silicon-containing dielectric layer over the first metal-containing dielectric layer, and forming a second metal-containing dielectric layer over the silicon-containing dielectric layer. The second metal-containing dielectric layer has a material that is different from the material of the first metal-containing dielectric layer.

Method for forming semiconductor device with multi-layer etch stop structure

A semiconductor structure includes a conductive feature, a first metal-based etch-stop layer over the underlying structure, a metal-free etch-stop layer over the first metal-based etch-stop layer, a second metal-based etch-stop layer over the metal-free etch-stop layer, an interlayer dielectric layer over the second metal-based etch-stop layer, and an interconnect structure extending through the first metal-based etch-stop layer, metal-free etch-stop layer, and the second metal-based etch-stop layer, wherein a bottom portion of the conductive interconnect structure directly contacts the conductive feature. The first metal-based etch-stop layer may include a first metallic component having one of aluminum, tantalum, titanium, or hafnium, and the second metal-based etch-stop layer may include a second metallic component the same as or different from the first metallic component. The first metal-based etch-stop layer and the second metal-based etch-stop layer may both be free of silicon.

Metal-based etch-stop layer

A semiconductor device structure is provided. The structure includes a conductive feature formed in an insulating layer. The structure also includes a first metal-containing dielectric layer formed over the insulating layer and covering the top surface of the conductive feature. The structure further includes a silicon-containing dielectric layer formed over the first metal-containing dielectric layer. In addition, the structure includes a second metal-containing dielectric layer formed over the silicon-containing dielectric layer. The second metal-containing dielectric layer includes a material that is different than the material of the first metal-containing dielectric layer.

Semiconductor device with multi-layer etch stop structure and method for forming the same

A pixel circuit with an organic light emitting diode (OLED) includes an OLED, a driving switch, an enabling switch, a compensation circuit, and a data switch. Through the compensation circuit, the data switch, and the control of a compensation voltage, a voltage at the control terminal of the driving switch of the pixel circuit is set according to a data voltage and the absolute value of a threshold voltage of the driving switch. Hence, the driving current determined by the driving switch relates to the data voltage.

Pixel circuit with organic light emitting diode

A backlight module includes an optical film set and a plurality of light source sets having a first light source and a second light source. The first light source generates a first chromaticity light while the second light source generates a second chromaticity light. The first chromaticity light mixes with the second chromaticity light in the space between the light source sets and the optical film set and then enters the optical film set. The first chromaticity light and the second chromaticity light have their own spectrum and both spectra fall into a first color region of the CIE 1931 color space. Within the first color region, the spectrum of the first chromaticity light is close to a second color region while the spectrum of the second chromaticity light is close to a third color region.

Backlight module and method of manufacture using complementary light sources having the same color

A circuit board assembly and a backlight module comprising the circuit board assembly are provided. The circuit board assembly has a first surface and a second surface opposite to the first surface, and further comprises at least one laminate, a first conductive wiring structure and a coating. The first conductive wiring structure is formed on the first surface. The coating is formed on the coating area of the second surface, wherein the coating can conduct heat and provide electric insulation. Thus, the circuit board assembly is adapted to outwardly conduct heat from the laminate through the second surface and to promote the heat dissipation efficiency of the circuit board assembly.

Circuit board assembly and backlight module comprising the same

A conductive composition and applications thereof are provided. The conductive composition comprises a mixture consisting of a metal powder and a glass powder. The diameter of the metal powder ranges from about 1 &#x3bc;m to about 3 &#x3bc;m. The diameter of glass powder ranges from about 0.5 &#x3bc;m to about 1 &#x3bc;m. The weight percentage of the metal powder to the mixture is from about 60% to about 98%. The conductive composition could be used to manufacture the electrodes of a flat lamp.

Conductive composition and applications thereof

A Plasma Display Panel (PDP) apparatus, system and method, includes a circuit framework structure, chassis structure, panel structure, TCP structure, at least one thermal pad structure and an insulating structure. An integrated circuit is coupled to at least one thermal pad structure and the TCP structure, and the circuit framework structure is disposed external to the TCP structure. Therefore, efficient dissipation of heat that is generated during operation of the PDP structures may be obtained. In addition, the amount of accumulated heat in the PDP structure may be significantly reduced due the PDP apparatus and structure configuration, thereby increasing the PDP operational life.

Plasma display panel thermal dissipation apparatus and method

A plasma display device having a laminar attachment structure capable of increasing attachment of a heat-dissipating plate to a plasma display panel. Through a laminar attachment structure with a plurality of small pieces of thermal pad or adhesive double tape and a closed loop of thermal pad or adhesive double tape accommodating the plurality of small pieces as well as by means of vacuum pumping, the air within the closed loop is drawn out when the heat-dissipating plate is combined to the plasma display panel so as to reduce bubbles formed between the heat-dissipating plate and the plasma display panel and to increase tight attachment therebetween.

Growing community of inventors

Hsinchu, Taiwan

Yu-Kai Lin