Taiwan Semiconductor Manufacturing Comp. Ltd.

Protai Photonic Co., Ltd.

Other

Fego Precision Industrial Co., Ltd.

Richtek Technology Corporation

National Formosa University

Chian Yih Optotech Co., Ltd.

Industrial Technology Research Institute

Senko Advanced Components, Inc.

National Chung Cheng University

Development Center for Biotechnology

Yu-Kai Chen

Chin-Hsiung Chang

Chun-Hsien Huang

Wei-Yip Loh

Hung-Hsu Chen

Hong-Mao Lee

Jyh-Cherng Yang

Chih-Wei Chang

Tsai-Fu Wu

Ming-Hsing Tsai

Wei-Jung Lin

Li-Wei Chu

Ying-Chi Su

Hsien-Lung Yang

Yung-Chun Wu

Su-Yu Yeh

Ko-Bin Kao

Po-Hung Chen

Li-Jen Wu

Chia-Hung Chung

Ming-Hung Lin

Zhi-You Ke

Yan-Ming Tsai

Cheng Hui Wang

Yu-Ming Huang

Yu-Wen Cheng

Yu-Shiuan Wang

Ming-Feng Kuo

Jyun-Lin Lai

Wen-Yang Wang

Chih-Hao Chang

Tzu-Chen Lin

Yu-Chang Chen

Chih-wei Chang

Kuang-Fu Chang

Yung-Chin Hsiao

Hsin-Yi Wu

Tomoyuki Mamiya

Chu-Bin Liao

Li-Di Luo

Szu-Liang Lai

Chen-Wei Huang

Li-Chiun Lin

Ying-Tzu Lin

Chen-Hsuan Ho

Sen Lee

Bou-Chih Yang

Sheng-Yu Tseng

Hong-Siang Ruei

Tze-Ping Yang

Hung-Yu Chen

Chau-Chung Song

An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Ammonium fluoride pre-clean protection

Semiconductor device pre-cleaning

A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Method of forming contact metal

A switch mode power supply circuit with high voltage output, an electrostatic spray apparatus and agricultural plant protection apparatus using the same are provided. The switch mode power supply circuit is electrically connected in series with at least a pre-stage power converter and a post-stage power converter. In order to simplify the control, the switch of the pre-stage power converter is omitted, only one switch of the post-stage power converter is adopted to perform synchronous control. Since the multiple sets of power conversion circuits in the previous stage are connected in series, the turn ratio of the transformer in the power converter in the subsequent stage can be reduced. Therefore, the transformer can be miniaturized and the power supply circuit would be more suitable for agricultural plant protection machine and electrostatic spray apparatus.

Switch mode power supply circuit with high voltage output, and electrostatic spray apparatus and agricultural plant protection apparatus using the same

An antibody, or an antigen-binding fragment thereof, that binds specifically to human CSF-1R includes a heavy chain variable domain that contains a HCDR1 region having the sequence of SEQ ID NO: 4, a HCDR2 region having the sequence of SEQ ID NO: 5, and a HCDR3 region having the sequence of SEQ ID NO: 6; and a light chain variable domain that contains a LCDR1 region having the sequence of SEQ ID NO: 7, a LCDR2 region having the sequence of SEQ ID NO: 8, and a LCDR3 region having the sequence of SEQ ID NO: 9. The heavy chain variable domain comprises the sequence of SEQ ID NO: 2, and wherein the light chain variable domain comprises the sequence of SEQ ID NO: 3.

Anti-human CSF-1R antibody and uses thereof

Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Conductive feature formation and structure

A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.

Manufacturing method of semiconductor device and semiconductor processing system

A photoresist baking apparatus is provided. The photoresist baking apparatus includes a baking chamber, a hot plate disposed in the baking chamber, and a cover plate disposed over the hot plate. The cover plate has a plurality of exhaust holes. The exhaust holes include a first exhaust hole and a second exhaust hole arranged in a first direction. The first exhaust hole and the second exhaust hole have different sizes.

Photoresist baking apparatus with cover plate having uneven exhaust hole distribution

A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

A photoresist baking apparatus is provided. The photoresist baking apparatus includes a baking chamber having an exhaust port on a sidewall of the baking chamber, a hot plate disposed in the baking chamber, an exhaust line coupled to the exhaust port, and a cover plate disposed over the hot plate and between the hot plate and the exhaust port. The exhaust line is configured to exhaust out an atmosphere inside the baking chamber in an exhaust direction. The cover plate has a plurality of exhaust holes to allow air to flow through. The exhaust holes include a first exhaust hole and a second exhaust hole arranged in a first direction that is perpendicular to the exhaust direction.

Growing community of inventors

Taipei, Taiwan

Yu-Kai Chen