Samsung Electronics Co., Ltd.

California Institute of Technology

Yu-Jung Lu

Harry A Atwater

Ruzan Sokhoyan

Ragip Pala

Duhyun Lee

Ghazaleh Kafaie Shirmanesh

Seunghoon Han

Chanwook Baik

Ho Wai Lee

Krishnan Thyagarajan

Yao-Wei Huang

Ghazaleh Kafaie

Chan-Wook Baik

Provided is a quantum dot (QD) light modulator and an apparatus including the QD light modulator. The QD light modulator may include a QD-containing layer including QDs having light-emission characteristics, a refractive index change layer arranged adjacent to the QD-containing layer, and a reflector arranged facing the QD-containing layer. The refractive index change layer may include a carrier density change area in which a carrier density changes, and the carrier density change area may be arranged adjacent to the QD-containing layer. The light-emission characteristics of the QD-containing layer may be modulated according to a change in a property of the refractive index change layer. The QD light modulator may further include a nano-antenna structure arranged on the QD-containing layer.

Quantum dot light modulator and apparatus including the same

Provided are light emission devices including an output coupler and optical apparatuses having the same. The light emission device may include a QD layer containing quantum dots and a nano-antenna structure including an output coupler configured to control an output characteristic of light emitted from the QD layer. The output coupler may be configured to output an emission wavelength of the QD layer. The nano-antenna structure may include one of a metallic antenna, a dielectric antenna, and a slit-containing structure, or may have a multi-patch antenna structure or a fishbone antenna structure.

Light emission device including output coupler and optical apparatus adopting the same

An optical modulating device may include a plurality of quantum dot (QD)-containing layers having QDs and a plurality of refractive index change layers. The QD-containing layers may be disposed between the refractive index change layers, respectively. The optical modulating device may be configured to modulate light-emission characteristics of the plurality of QD-containing layers. At least two of the QD-containing layers may have different central emission wavelengths. At least two of the plurality of refractive index change layers may include different materials or have different carrier densities.

Optical modulating device and apparatus including the same

An optical modulating device includes a permittivity change layer having a variable permittivity, a dielectric layer disposed on the permittivity change layer, a nanoantenna disposed on the dielectric layer, and a light-emitting structure disposed adjacent to the permittivity change layer.

Optical modulating device having gate structure

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Pasadena, CA, United States of America

Yu-Jung Lu