Macronix International Co., Ltd.

Vanguard International Semiconductor Corporation

E Ink Holdings Inc.

Yu-Jui Chang

Cheng-Chi Lin

Shih-Chin Lien

Chia-Hao Kuo

Kai-Chuan Kan

Hao-Ting Hsu

Shyi-Yuan Wu

Chih-Cherng Liao

Ya-Ting Chang

Tsung-Hsiung Lee

Chien-Hsien Song

Kwang-Ming Lin

I-Ping Lee

Chun-Ming Chiou

Yow-Shiuan Liu

Ya-Huei Kuo

Pei-Yu Chang

Zheng-Xian Wu

A semiconductor device includes a substrate, a first well region, a second well region, an isolation region, a first resistor segment and a second resistor segment. The substrate includes a region having a first conductivity type. The first and the second well regions are disposed in the region of the substrate. The isolation region is disposed on the first and the second well regions. The first and the second resistor segments are electrically connected to each other and disposed on the isolation region. Moreover, the first and the second well regions are disposed directly under the first and the second resistor segments, respectively. The first and the second well regions do not overlap with each other in a vertical projection direction and have a second conductivity type that is opposite to the first conductivity type.

Semiconductor device

Methods of forming semiconductor devices are provided. The methods include: forming a trench in a substrate, wherein the trench includes a defect protruding from a bottom surface of the trench; forming a flowable material on the substrate to at least partially cover the defect; performing an etching process to reduce the height of the defect; and removing the flowable material.

Methods for forming semiconductor devices

An electro-phoretic display apparatus including an electro-phoretic display panel and a driving circuit is provided. The electro-phoretic display panel includes a display area and a border area. The driving circuit is configured to drive the display area to display an image frame according to a first voltage. The driving circuit drives the border area to maintain displaying a border of a first color or a second color according to a second voltage. The driving circuit generates the second voltage according to the first voltage. The border area includes electro-phoretic particles of the first color or the second color. A voltage difference between the first voltage and the second voltage drives the electro-phoretic particles of the first color or the second color to be maintained to a predetermined position such that the border area maintains displaying the border of the first color or the second color.

Electro-phoretic display apparatus

An electro-phoretic display apparatus including an electro-phoretic display panel and a driving circuit is provided. The electro-phoretic display panel includes a display area and a border area. The driving circuit is coupled to the electro-phoretic display panel. The driving circuit is configured to drive the display area to display an image frame according to a first voltage. The driving circuit drives the border area to maintain displaying a white border or a black border according to a second voltage.

A semiconductor structure and a method of manufacturing the semiconductor structure are provided. The semiconductor structure includes at least a substrate, an isolated structure, a gate, a source, a drain, a deep well, and a body well. The deep well extends under the isolated structure, and the body well is formed in the deep well between the gate and the isolated structure, wherein the body well has a convex region extending under the isolated structure. The deep well has a drive-in region outside the convex region of the body well, and the drive-in region has a lower doping concentration than remainder of the deep well.

Semiconductor structure and method of manufacturing the same

A semiconductor device includes a substrate; a well region of a first-conductivity-type, disposed in the substrate; a first impurity region of a first-conductivity-type disposed in the well region; a second impurity region of the second-conductivity-type disposed in the well region, the second-conductivity-type being opposite to the first-conductivity-type; a third impurity region disposed in the well region, a portion of the first impurity region overlapping a first portion of the third impurity region, a portion of the second impurity region overlapping a second portion of the third impurity region, and a third portion of the third impurity region being disposed between the first impurity region and the second impurity region; and a fourth impurity region and a barrier layer disposed in the substrate, the fourth impurity region and the barrier layer enclosing the well region from around and below, respectively.

Semiconductor device and Zener diode

A semiconductor device includes a substrate, a well region of a first-conductivity type disposed in the substrate, a first impurity region of a second-conductivity type and having a plurality of branches disposed in the well region, a second impurity region of the first-conductivity type and having a plurality of branches, and a third impurity region of the first-conductivity type disposed in the well region. The second-conductivity type is opposite to the first-conductivity type. A portion of the first impurity region overlaps a portion of the third impurity region. The plurality of branches of the second impurity region are disposed in the third impurity region, and a portion of the third impurity region is disposed between the first impurity region and the second impurity region.

Semiconductor device and Zener diode having branch impurity regions

A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a source region disposed in the high-voltage well, a drain region disposed in the high-voltage well and spaced apart from the source region along a first direction, and a buried layer having the second conductivity type and disposed under an area between the source region and the drain region.

Semiconductor device having buried layer

A semiconductor device includes a substrate, a high-voltage N-well (HVNW) disposed in the substrate, a bulk P-well disposed in the substrate and adjacent to an edge of the HVNW, a high-voltage (HV) diode disposed in the HVNW, the HV diode including a HV diode P-well disposed in the HVNW and spaced apart from the edge of the HVNW, and an N-well disposed in the HVNW and between the HV diode P-well and the bulk P-well. A doping concentration of the N-well is higher than a doping concentration of the HVNW.

Semiconductor device including high-voltage diode

A semiconductor device includes a substrate, an insulation layer disposed over the substrate, covering a drift region, and including a first edge and a second edge opposite to the first edge, a gate layer covering the first edge of the insulation layer, and a metal layer including a metal portion connected to the gate layer and overlapping the first edge of the insulation layer. The metal portion includes a first edge located closer to a central portion of the insulation layer than an opposite second edge of the metal portion. A distance from the first edge of the metal portion to the first edge of the insulation layer along a channel length direction is a. A distance from the first edge of the insulation layer to the second edge of the insulation layer is L. A ratio of a/L is equal to or higher than 0.46.

Growing community of inventors

Hsinchu, Taiwan

Yu-Jui Chang