Hynix Semiconductor Inc.

Seoul National University

Lg Electronics Inc.

Shangrao Jinko Solar Technology Development Co., Ltd

Lot Vacuum Co., Ltd.

Lot Ces Co., Ltd.

Shangrao Xinyuan Yuedong Technology Development Co. Ltd.

Jingao Solar Co., Ltd.

Yu Jin Lee

Seh-Won Ahn

Jin-Won Chung

Seongtak Kim

Sang Joon Kim

Sang Ho Choi

Kwang Suk Park

Tae Young Kim

Seung Ah Lee

Jee Hoon Kim

Kyung Chul Lee

Nak Kyu Baek

Hyung Jun Kim

Jae Woo Jung

Goo Man Park

Hyun Bin Kwon

Hee Nam Yoon

Hye Suk Chae

Won Hong Ju

Ho Sik Kim

Jeong Kyun Ra

A piping apparatus includes an exhaust pipe providing a passage through which the exhaust gas discharged, and a harmful gas treatment device positioned between a rear end of the vacuum pump and a front end of the exhaust pipe or positioned on the exhaust pipe, wherein the harmful gas treatment device includes a heating means for increasing the temperature of the exhaust gas so as to prevent a sublimable component, from among components included in the exhaust gas, from being sublimated and accumulated inside the exhaust pipe, and the heating means is positioned on a section including a sublimation condition occurrence point, at which a sublimation condition of the sublimable component occurs, and an upstream side of the sublimation condition occurrence point on the exhaust pipe, and the sublimation condition is a temperature condition for the pressure of the sublimable component.

Piping apparatus having harmful gas treatment device, design method therefor, and harmful gas treatment facility comprising same

A method for manufacturing a phase mask and a lens-less camera module comprises the steps of: obtaining a replica mold on which an inverted phase shift pattern is formed in which a phase shift pattern of a master phase mask spaced apart from an image sensor is inverted; calculating a thickness of a phase mask disposed on the image sensor replacing the master phase mask; arranging a photocurable material for implementing the phase mask on the image sensor to a calculated thickness, placing the replica mold on an upper surface of the photocurable material, and then curing the photocurable material; and removing the replica mold from the top of the phase mask, so that the focal distance change or parallel movement does not occur depending on the position of the phase mask.

Methods for manufacturing phase masks and lens-less camera module

Discussed is a tandem solar cell manufacturing method including etching a crystalline silicon substrate, whereby a solar cell can be obtained which does not have a pyramid-shaped defect on a surface of the substrate, inhibits the generation of a shunt through the substrate having excellent surface roughness properties, and can secure fill factor properties, the solar cell being capable of being obtained through the tandem solar cell manufacturing method. The method includes preparing a crystalline silicon substrate; performing an isotropic etching process of the substrate; and removing a saw damage on a surface of the substrate by performing an anisotropic etching process of the isotropically etched substrate.

Tandem solar cell manufacturing method

A device for projecting an image on a surface of an object includes an extracting unit configured to extract information about a plurality of lines from an image of the object based on depth information and color information extracted from the image of the object; an image projection distortion information deriving unit configured to derive image projection distortion information about the surface of the object based on the information about the plurality of lines; and a projecting unit configured to project a content image on the surface of the object based on the derived image projection distortion information.

Device for projecting image on surface of object

The present invention relates to a method for manufacturing: a perovskite solar cell in which the laminated shape and the composition of a perovskite absorbing layer are controlled; and a tandem solar cell comprising the perovskite solar cell, and the perovskite absorbing layer is formed through a method for manufacturing a solar cell, comprising the steps of: forming, on a substrate, an inorganic seed layer conformal with the substrate by using a BO source, an A-doped BO source or an AxOy source and the BO source; and supplying organic halides onto the seed layer, and thus a perovskite thin film having a complex composition conformal with the substrate can be formed such that an effect of enabling light absorption to increase can be achieved.

Method for manufacturing solar cell

A method for inducing an activity of a user's autonomic nervous system is provided. The method includes steps of: (a) on condition that each of the user's reference heart rate information corresponding to each of active states of the user's autonomic nervous system is obtained, an inducing device, if a specific active state of the autonomic nervous system is selected by the user, acquiring first reference heart rate information of the user corresponding to the specific active state of the autonomic nervous system; and (b) the inducing device supporting a first vibration stimulus with a first period corresponding to the first reference heart rate information to be applied to the user, to thereby allow the user's real-time average cardiac interval to be synchronized with the first vibration stimulus.

Apparatus for inducing activity of user's autonomic nervous system and method thereof

Manufacturing a resistance RAM device includes the steps of forming an insulation layer on a semiconductor substrate having a bottom electrode contact; etching the insulation layer to define a hole exposing the bottom electrode contact; depositing sequentially a bottom electrode material layer and a TMO material layer selectively within the hole; depositing a top electrode material layer within the hole and on the insulation layer in such a way as to completely fill the hole in which the bottom electrode material layer and the TMO material layer are formed; removing partial thicknesses of the top electrode material layer and the insulation layer to form a stack pattern comprising a bottom electrode, a TMO, and a top electrode.

Method for manufacturing resistance RAM device

A method for fabricating a semiconductor device is provided. In the method, a bulb type recess is formed on a semiconductor substrate in an active region. A gate insulating film is formed over the semiconductor substrate and on a surface of the recess. A first polysilicon layer is formed over the gate insulating film. A silicon-on-dielectric ('SOD') barrier film is formed on the first polysilicon layer at a lower part of the recess. A second polysilicon layer is formed over the semiconductor substrate and filling the recess. Impurity ions are injected into the second polysilicon layer. An annealing process is performed on the semiconductor substrate. A metal layer and a gate hard mask layer is formed and patterned over the second polysilicon layer to form a gate including the SOD barrier film.

Semiconductor device and method for fabricating the same

Growing community of inventors

Seoul, South Korea

Yu Jin Lee