Applied Materials, Inc.

Imra America, Inc.

Yu Jin

Li-Qun Xia

Mei-Yee Shek

Yong Che

Bing Liu

Xiaolan Ba

Weifeng Ye

Wei Guo

Steven Verhaverbeke

Deenesh Padhi

Mihaela A Balseanu

Alexandros T Demos

Roman Gouk

Xiaojun Zhang

Kevin V Hagedorn

Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.

Cu/barrier interface enhancement

Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N:NHratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.

Enhancing electrical property and UV compatibility of ultrathin blok barrier film

Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer for use in magnetic media. According to embodiments of the present application, a silicon oxide layer formed by low temperature chemical vapor deposition is used to form a pattern in a hard mask layer, and the patterned hard mask is used to form a patterned magnetic layer by plasma ion implantation.

Apparatus and methods for silicon oxide CVD resist planarization

The present invention provides a non-vacuum method of depositing a photovoltaic absorber layer based on electrophoretic deposition of a mixture of nanoparticles with a controlled atomic ratio between the elements. The nanoparticles are first dispersed in a liquid medium to form a colloidal suspension and then electrophoretically deposited onto a substrate to form a thin film photovoltaic absorber layer. The absorber layer may be subjected to optional post-deposition treatments for photovoltaic absorption.

Non-vacuum method for fabrication of a photovoltaic absorber layer

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Santa Clara, CA, United States of America

Yu Jin