Lam Research Corporation

Paypal, Inc.

Yu Jiang

Richard Stephan Wise

Hui-Jung Wu

Yang Pan

Jengyi Yu

Nader Shamma

Boris Volosskiy

Samantha S H Tan

Leo Hsieh

Jaya Kumar Murari

Rohan Benkar

Samantha SiamHwa Tan

Mansa Rajagopalan

Gordon Peng

Seyedalireza Torbatisarraf

Narudha Tai Benyuhmin

Steve Askin

David Celli

Gordon Wen-Yin Peng

Adrian Radocea

Nicolas Londono

In some examples, a liquid precursor vaporizer comprises an inlet, an outlet, and a first vaporizer core, the first vaporizer core including a plurality of nested cells defining a plurality of tortuous paths through which a liquid precursor can pass in a path between the inlet and the outlet of the liquid precursor vaporizer.

Liquid precursor vaporizer

A method of processing a substrate includes: providing a substrate having one or more mandrels comprising a mandrel material, wherein a layer of a spacer material coats horizontal surfaces and sidewalls of the one or more mandrels; and etching and completely removing the layer of the spacer material from the horizontal surfaces of the one or more mandrels and thereby exposing the mandrel material, without completely removing the spacer material residing at the sidewalls of the one or more mandrels. The etching includes exposing the substrate to a plasma formed using a mixture comprising a first gas and a polymer-forming gas, and wherein the etching comprises forming a polymer on the substrate. Polymer-forming gas may include carbon (C) and hydrogen (H).

Tin oxide films in semiconductor device manufacturing

Tin oxide film on a semiconductor substrate is etched selectively in a presence of photoresist by exposing the substrate to at least one of hydrogen-based chemistry and chlorine-based chemistry. In some implementations, a method of processing a semiconductor substrate starts by providing a semiconductor substrate having a patterned photoresist layer overlying a tin oxide layer. Next, openings are etched in the tin oxide layer using the patterned photoresist layer as a mask, and using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry. After the openings have been etched in the tin oxide layer, the photoresist layer is removed using an oxygen-based etch chemistry.

A consumable part for a plasma processing chamber includes a plasma facing side. An engineered surface is formed into the plasma facing side of the consumable part. A plurality of raised features defines the engineered surface, wherein features are arranged in a predefined pattern, wherein each of the plurality of raised features includes a top region having an outer edge and a sidewall. A base surface of the engineered surface is configured to surround each of the plurality of raised features, such that a corresponding sidewall of a corresponding raised feature extends up at an angle from the base surface to a corresponding top region. The consumable part is configured to be installed in the plasma processing chamber. The consumable part is configured to be exposed to a plasma and byproducts of the plasma.

Macroscopic texturing for anodized and coated surfaces

A consumable part and methods for tracking the consumable part includes embedding a radio frequency tag within a pocket created on a side of the consumable part that faces away from a process region defined within a process chamber of the processing tool and covering an opening of the pocket using a plug. The plug is laser fused along an interface formed between sidewalls of the plug and sidewalls of the pocket.

Encapsulated RFID in consumable chamber parts

Tin oxide film on a semiconductor substrate is etched selectively with an etch selectivity of at least 10 in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H) and a hydrocarbon (e.g., at a hydrogen/hydrocarbon ratio of at least 5), such that a carbon-containing polymer is formed on the substrate. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes Hand a hydrocarbon.

Tin oxide film on a semiconductor substrate is etched selectively in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H) and a hydrocarbon. The hydrocarbon significantly improves the etch selectivity. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes Hand a hydrocarbon.

There is provided systems and method for a virtual display device for an interactive merchant sales environment. A device, such as a communication device, may allow a user to view virtual images of items in a user environment so that a user may view what their potential purchase may look like when placed into the user environment. The user environment may include a residential room, an office, a car interior, or other location where a user may place purchased items. The user may submit a request to view an item in the user environment to the device, which may communicate the request to a merchant or a service provider. The virtual image may correspond to digital image(s) of an item used to present a three dimensional virtual image of the item in the user environment. The device may receive the virtual image(s) and display them to the user.

Virtual display device for an interactive merchant sales environment

Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer is formed conformally over sidewalls and horizontal surfaces of protruding features on a substrate. A passivation layer is then formed over tin oxide on the sidewalls, and tin oxide is then removed from the horizontal surfaces of the protruding features without being removed at the sidewalls of the protruding features. The material of the protruding features is then removed while leaving the tin oxide that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers. Hydrogen-based and chlorine-based dry etch chemistries are used to selectively etch tin oxide in a presence of a variety of materials. In another method a patterned tin oxide hardmask layer is formed on a substrate by forming a patterned layer over an unpatterned tin oxide and transferring the pattern to the tin oxide.

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San Jose, CA, United States of America

Yu Jiang