International Business Machines Corporation

Peking University

Beijing Founder Electronics Co., Ltd.

Yu Jia Tang

Meng Zhang

Xin Zhang

Hui Du

Yu Du

Bao Guo Xie

Shuai Zhu

Si Huang

Ru Huang

Yimao Cai

Wen Jun Yin

Yue Pan

Poren Tang

Hao Lin

Gengyu Yang

Shenghu Tan

Shiqiang Qin

Genglin Huang

Lijie Zhang

Xin Huang

Yinglong Huang

Qianqian Huang

Techniques for generating dynamic dust emission risk index values via construction and use of a dynamic dust emission risk index model are provided. In one example, a computer-implemented method comprises generating, by a system operatively coupled to a processor, a dynamic dust emission risk index value based on a dynamic dust emission risk index model. The computer implemented method also includes supplying, by the system, the dynamic dust emission risk index value to an air quality model. Additionally, the computer implemented method further comprises generating, by the system, a dust emission forecast based on the air quality model.

Dust emission forecasting

Post-processing corrections can be applied to operational numerical model forecasts of weather variables to reduce forecast model errors. The post-processing technique is based on an analog post-processing correction scheme. In the analog scheme, the system searches for previous model forecasts that are similar to the current forecast, and modifies the current forecast based on errors in such previous predictions. An 'abnormal (or abnormal) index' can be generated for each analog as a function of several meteorology variables (i.e., humidity, pressure and temperature) and two experience coefficients. The abnormal index can be used to exclude some errors. Furthermore, dynamic weights based on the 'abnormal index' can be applied to the errors. Using the &#x201c;abnormal index&#x201d; weights in a post-processing technique may generate a more accurate air quality forecast.

Post-processing air quality forecasts

A method for establishing and using a pollutant emission scavenging forecasting (PESF) model to calculate a purgeable pollutant emission to dynamically control an emitted pollutant at any target concentration. The dynamic control considers the initial pollutant concentration and pollutant scavenging ability of atmosphere. The method further takes into account the constraint conditions specified by a user, and employs a dynamic emission correction system to quickly calculate an optimal pollutant emission scheme. If the emission is lower than minimum acceptable value for a current time instance (a moment), the method corrects the emission intensity before (prior to) this moment by changing the initial concentration at this time. This initial concentration is the final pollutant concentration of a prior moment. Since the method makes full use of the atmospheric pollutants scavenging ability, the dynamic emission control scheme can provide the most effective and lowest economic losses solution.

Dynamic emission discharge reduction

A system, method and computer program product for establishing and using a pollutant emission scavenging forecasting (PESF) model to calculate a purgeable pollutant emission to dynamically control an emitted pollutant at any target concentration. The dynamic control considers the initial pollutant concentration and pollutant scavenging ability of atmosphere. The method further takes into account the constraint conditions specified by a user, and employs a dynamic emission correction system to quickly calculate an optimal pollutant emission scheme. If the emission is lower than minimum acceptable value for a current time instance (a moment), the method corrects the emission intensity before (prior to) this moment by changing the initial concentration at this time. This initial concentration is the final pollutant concentration of a prior moment. Since the method makes full use of the atmospheric pollutants scavenging ability, the dynamic emission control scheme can provide the most effective and lowest economic losses solution.

According to one or more embodiments of the present invention, a method of forecasting air quality is provided. The method includes determining weather pattern classifications based on global atmospheric information from a global weather model and determining a synoptic scale correction factor in response to the determination of the weather pattern classifications. The method also includes blending the global atmospheric information the synoptic scale correction factor to produce a data set and blending the data set with regional atmospheric information from a regional weather model to generate weather fields. The method further includes blending chemical information from a global chemical model and the synoptic scale correction factor to produce a second data set and blending the second data set into a regional chemical model based on the weather fields to forecast the air quality.

Air quality forecasting based on dynamic blending

The application provides a method for rasterization. According to the method, a primitive may be divided, at a position where a color abruptly changes in the primitive, into a plurality of sub-primitives with continuously and gradually changing colors. Each of the sub-primitives is then rasterized. The present application further provides an apparatus for rasterizing an image. The apparatus may comprise a dividing module configured to divide a primitive at a position where a color abruptly changes into a plurality of sub-primitives with continuously gradually changing colors. Furthermore, the apparatus may comprise a rasterizing module configure to rasterize each of the sub-primitives. The application may improve the speed of the rasterization and the quality of the processed image.

Method and apparatus for rasterization

The present invention discloses a method for achieving four-bit storage by using a flash memory having a splitting trench gate. The flash memory with the splitting trench gate is disclosed in a Chinese patent No. 200710105964.2. At one side that each of two trenches is contacted with a channel, a programming for electrons is achieved by using a channel hot electron injection method; and at the other side that each of the two trenches is contacted with a source or a drain, a programming for electrons is achieved by using an FN injection method, so that a function of a four-bit storage of the device is achieved by changing a programming mode. Thus, a performance of the device is improved while a storage density is greatly increased.

Method for achieving four-bit storage using flash memory having splitting trench gate

The invention relates to a technical field of graphic image processing, especially to a technology for simplifying a complex path. The invention provides a method and a device for simplifying a complex path, to accomplish simplification of any complex path into a simple path of a region described by the complex path. The method for simplifying a complex path comprises: parsing the complex path into a vector linked-list consisted of linked monotonic vectors; dividing each vector in the vector linked-list into vector segments according to intersection points of the vector with other vectors in the vector linked-list; and extracting from all vector segments the vector segments located on a boundary of a region defined by the complex path, and connecting the extracted vector segments according to their location to obtain a simple path. According the method of the present application, a complex path can be simplified to a simplest path defining a region by utilizing node scanning process, such that operations on a vector level for a complex path can be realized.

Method and device for simplifying a complex path

The present invention discloses a multilevel resistive memory having large storage capacity, which belongs to a field of a fabrication technology of a resistive memory. The resistive memory includes an top electrode and a bottom electrode, and a combination of a plurality of switching layers and defective layers interposed between the top electrode and the bottom electrode, wherein, the top electrode and the bottom electrode are respectively contacted with a switching layer (a film such as TaO, TiO, HfO), and the defective layers (metal film such as Ti, Au, Ag) are interposed between the switching layers. By using the present invention, a storage capacity of a resistive memory can be increased.

Multilevel resistive memory having large storage capacity

The present invention discloses a flash memory and the fabrication method and the operation method for the same. The flash memory comprises two memory cells of vertical channels, wherein a lightly-doped N type (or P type) silicon is used as a substrate; a P+ region (or an N+ region) is provided on each of the both ends of the silicon surface, and two channel regions perpendicular to the surface are provided therebetween; an N+ region (or a P+ region) shared by two channels is provided over the channels; a tunneling oxide layer, a polysilicon floating gate, a block oxide layer and a polysilicon control gate are provided sequentially on the outer sides of each channel from inside to outside; and the polysilicon floating gate and the polysilicon control gate are isolated from the P+ region by a sidewall oxide layer. The whole device is a two-bit TFET type flash memory with vertical channels which has better compatibility with prior-art standard CMOS process. As compared with a conventional MOSFET-based flash memory, the flash memory according to the present invention possesses various advantages such as high programming efficiency, low power consumption, effective inhibition of punch-through effect, and high density, etc.

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Beijing, China

Yu Jia Tang