Taiwan Semiconductor Manufacturing Comp. Ltd.

Mackay Memorial Hospital

Industrial Technology Research Institute

Visera Technologies Company Limited

Delta Electronics, Inc.

Mediatek Corporation

Asustek Computer Inc.

Tpk Touch Solutions (xiamen) Inc.

Henghao Technology Co. Limited

Lite-on Technology Corporation

Lite-on Electronics (guangzhou) Limited

National Taipei University of Technology

Chang Chun Plastics Co., Ltd.

Cyberpower Systems, Inc.

Taipei Veterans General Hospital

Yu-Jen Chen

Ling-Sung Wang

I-Shan Huang

Chan-yu Hung

Chen-Pang Kung

Wen-Hsi Lee

Ping-Pang Hsieh

Chen-Wei Lin

Wei-Ko Wang

Chih-Ming Lee

Yu-Yang Chang

Ching-Shan Lin

Liang-You Jiang

Pao-Ming Tsai

Hui-Fen Liao

Hsin-Chi Chen

Chin-Chuan Hsieh

Tien-He Chen

Wen-Tien Tsai

Ming-Hsi Wang

Cheng-Jen Chou

Tun-Tschu Chang

Chih-Yen Liu

Chang-Tai Chen

Hsien-Wei Chen

Yu-Ming Lin

Der-Chyang Yeh

Shiu-Ko JangJian

Chien-Chih Chen

Kuen-Yuan Hwang

An-Pang Tu

Wu-Cheng Kuo

Hsin-Yi Hsieh

Wei-Ting Wang

Kuo-Feng Lin

Ching-Ran Lee

Cheng-Chung Chiang

Chien-Chung Chang

Hsiung-Kuei Cheng

Han-Lin Li

Chi-Bin Wu

Chung-Hao Lin

Lichun Yang

Tsung-Lin Wu

Edwin Liou

Shou-Chieh Lin

Chien-Yi Huang

Te-Wei Yuan

Ting-Kuan Li

Chi Liu

Chao-Shun Wang

Cheng-Deng Kuo

Sung-Kuang Chung

Yi-Kai Chou

Chung-Jung Hsu

Chan-Hao Tseng

Kuang-Peng Lin

Che-Min Kung

Chen-Kun Chou

Chang-Wei Chen

Chia-Hui Wu

Chun-Mao Tseng

Shih-Liang Ku

Chia-Yuan Liu

Yi-Hua Chiu

Chin-Sheng Chen

Zhan-Yi Lin

Jiann-Yeh Ou

Kai-Lung Hua

Min-Che Kao

Lu-Chien Chen

Cheng-Yen Lo

Chan-Yu Hung

Hung-Chi Fang

Fang-Chen Chang

Wen-Chung Chang

Jin-Yi Wu

Chi-Chun Huang

Chien-Yu Tseng

John Kao

Hung-Pin Yu

Chun-Hsiang Tsai

Li Ding

Yu-Yawn Chen

Lie-Chwn Lin

Ching-Pin Lin

Kai Hsiang Chiang

Chia Hurg Ting

Hung-Chi Tai

Kai-Hsiang Chiang

Lup Cheong Patrick Hung

Lie-Chwen Lin

Frank Sung

Ming-Hsin Thomas Chen

Jeffrey Liou

Yu Yong Shen

Wen-Jen Lo

Min-Hung Chang

Hui-Fang Yan

Yi-Nian Zou

A semiconductor structure includes first and second active regions extending in a first direction. The semiconductor structure further includes gate electrodes extending in a second direction perpendicular to the first direction. Each of the gate electrodes includes a first segment over at least one of the first active region or the second active region; a gate extension extending beyond each of the first active region and the second active region, wherein the gate extension has a uniform width in the first direction, and a conductive element, wherein a width of the conductive element in the first direction increases as a distance from the gate extension increases along an entirety of the conductive element in the second direction.

Semiconductor device

An embedded power supply apparatus is partially buried in an enclosed structure, is configured to provide a first DC voltage to a plurality of electronic devices, and includes a first power conversion circuit, a plurality of switch circuits, a human-machine interface module and a control circuit. The first power conversion circuit is configured to convert an input AC voltage into the first DC voltage and provide the first DC voltage to the switch circuits. The switch circuits each is configured to selectively transmit the first DC voltage to a corresponding electronic device of the electronic devices according to a corresponding first control signal of a plurality of first control signals. The control circuit is configured to receive a second control signal generated by the human-machine interface module, and generate the first control signals to the switch circuits according to the second control signal.

Embedded power supply apparatus and power supply system

A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction substantially perpendicular to the first direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and each of the gate structures extending at least unilaterally substantially beyond a first side of the corresponding first or second active region that is proximal to the gap or a second side of the corresponding first or second active region that is distal to the gap; and some but not all of the gate structures also extending bilaterally substantially beyond each of the first and second sides of the corresponding first or second active region.

Semiconductor device including unilaterally extending gates and method of forming same

Disclosed herein are teeth-operated mouth mouses and methods of using the same. In some embodiments, the teeth-operated mouth mouse includes a mounting conforming to a row of upper teeth in the oral cavity of a user; and a plurality of sensors independently disposed at a position corresponding to an individual tooth along the mounting and wirelessly coupled to the computer for transmitting and receiving signals therebetween; wherein, each of the plurality sensors is capable of performing at least one teeth-activating task selected from the group consisting of 'moving to the right', “moving to the left”, “moving forward”, “moving backward”, and “enter”. Also provided herein are methods of operating a computer with the aid of the disclosed teeth-operated mouth mouse. The method includes selectively clicking one of the plurality of sensors respectively disposed on the mounting by the lower teeth once or twice to instruct the single or double-clicked sensor to perform one of the teeth-activating tasks associated therewith.

Teeth-operated mouth mouse and uses thereof

A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and for each active region, a portion of each of some but not all of the gate structures (gate extension) extending partially into the gap; and when viewing the gate structures as a group, the group having a notched profile relative to the second direction, where notches in the notched profile correspond to ones of the gate structures which are substantially free of extending into the gap.

Semiconductor device including trimmed-gates and method of forming same

An image sensor is provided. The image sensor includes a substrate having a first pixel region and a second pixel region. The image sensor also includes a resonator structure disposed over the substrate. The resonator structure includes a first metal layer over the first pixel region and the second pixel region. The resonator structure also includes a first insulating layer over the first metal layer and the first pixel region. The first insulating layer has a first thickness. The resonator structure further includes a second insulating layer over the first metal layer and the second pixel region. The second insulating layer has a second thickness that is greater than the first thickness. In addition, the resonator structure includes a second metal layer over the first insulating layer and the second insulating layer.

Image sensors including insulating layers in different pixel regions having different thicknesses and methods for forming the same

A method of making a semiconductor structure includes forming a plurality of gate electrodes over a plurality of active regions. The method further includes increasing a width of a portion of each of the plurality of gate electrodes between adjacent active regions of the plurality of active regions, wherein increasing the width of the portion of each of the plurality of gate electrodes comprises increasing the width of less than an entirety of each of the plurality of gate electrodes between the adjacent active regions. The method further includes removing a central region of each of the plurality of gate electrodes, wherein the central region has the increased width, and removing the central region comprises removing less than an entirety of the portion of each of the plurality of gate electrodes.

Method of making semiconductor device and semiconductor device

The present disclosure provides a spraying system and a using method thereof. The spraying system includes a lifting apparatus and a spraying apparatus. The spraying apparatus connects to the lifting apparatus and includes a stage, a multi-axis transfer mechanism, a spraying component, a driving component, a surface profile detector, and a controlling component. The multi-axis transfer mechanism is disposed on the stage. The spraying component is disposed on the multi-axis transfer mechanism and the stage. The driving component is disposed on the stage and connects to the lifting apparatus. The surface profile detector is disposed on the stage and scans an area to be sprayed to obtain scanning data. The controlling component is disposed on the stage and controls the lifting apparatus, the spraying component, and the driving component according to the scanning data and pre-stored initial data.

Spraying system and using method thereof

A biosensor is provided. The biosensor includes a substrate, photodiodes, pixelated filters, an excitation light rejection layer and an immobilization layer. The substrate has pixels. The photodiodes are disposed in the substrate and correspond to one of the pixels, respectively. The pixelated filters are disposed on the substrate. The excitation light rejection layer is disposed on the pixelated filter. The immobilization layer is disposed on the excitation light rejection layer.

Biosensor and method of forming the same

An the LED driving circuit, for driving an the LED load, includes: a bridge rectifier for rectifying an AC input voltage into a DC voltage; a serial capacitor voltage divider coupled to the bridge rectifier, including a plurality of serial capacitors; a half-bridge switch, coupled to the serial capacitor voltage divider; and a controller coupled to the half-bridge switch, for determining whether the DC voltage is higher than a threshold value and for controlling the half-bridge switch in a full-voltage mode or a half-voltage mode. In the full-voltage mode, the plurality of serial capacitors of the serial capacitor voltage divider synchronously supply power to the LED load. In the half-voltage mode, the plurality of serial capacitors of the serial capacitor voltage divider alternatively supply power to the LED load.

LED driving circuit and method

A method (of manufacturing a semiconductor device) includes: forming active regions including spacing apart neighboring active regions resulting in corresponding gaps; forming gate structures (overlying the active regions and the gaps) including locating intra-gap segments of the gate structures over the gaps, arranging each intra-gap segment to include two end regions separated by a central region, and at intersections between active regions and gate structures that is designated to be non-functional (flyover intersection), preventing formation of a functional connection between the two; and removing selected portions of at least some of the intra-gap segments including removing central regions of first selected intra-gap segments substantially without removing portions of corresponding end regions of the first selected intra-gap segments, and removing central regions and portions of end regions of second selected intra-gap segments for which corresponding end regions of the second intra-gap segments abut flyover intersections thereby trimming corresponding gate structures.

Method of forming semiconductor device including trimmed-gates

A physiological data detection method is provided. The physiological data detection method includes the following steps. Firstly, an ECG signal and a PPG signal are detected. Then, a plurality of RRI values is calculated according to the ECG signal, and a plurality of PPI values is calculated according to the PPG signal. Thereafter, wrong RRI values are excluded according to the RRI values and/or the PPI values. Then, whether an abnormal state occurs or not is determined by using the remaining RRI values. A wearable device therefor is also provided.

Physiological data detection method and wearable device therefor

A wearable blood pressure detecting device is provided. The wearable blood pressure detecting device includes a pulse detecting module, a processing unit, a memory unit, a model selecting unit, and a blood pressure calculating unit. The pulse detecting module is configured to generate a pulse waveform. The processing unit is configured to capture the pulse waveform to generate at least one pulse characteristic value. The memory unit is configured to store at least two blood pressure models corresponding to different pulse characteristic value ranges. The model selecting unit is configured to select a corresponding blood pressure model according to the at least one pulse characteristic value. The blood pressure calculating unit is configured to calculate a blood pressure value by the selected blood pressure model.

Wearable blood pressure detecting device and detecting method thereof

The semiconductor structure includes first and second active regions arranged in a first grid oriented in a first direction. The semiconductor structure further includes gate electrodes arranged spaced apart in a second grid and on corresponding ones of the active regions, the second grid being oriented in a second direction, the second direction being substantially perpendicular to the first direction. The first and second active regions are separated, relative to the second direction, by a gap. Each gate electrode includes a first segment and a gate extension. Each gate extension extends, relative to the second direction, beyond the corresponding active region and into the gap by a height H, where H&#x2264;150 nanometers (nm). Each gate extension, relative to a plane defined by the first and second directions, is substantially rectangular.

A converter with half-bridge circuit is disclosed. The converter includes a voltage source, a first switch, a second switch, a first resonant capacitor, a second resonant capacitor, a resonant inductor, a transformer and a control unit. The control unit is configured to generate a first control signal for turning on/off the first switch and a second control signal for turning on/off the second switch. When the half-bridge converter is turned on or reopened, a first duty rate of a first pulse being the first pulse of the first control signal for turning on the first switch is less than 50%, and a second duty rate of a second pulse being the first pulse of the second control signal for turning on the second switch after the end of the first pulse of the first control signal is greater than 50%.

Converter with adjusted duty rates controlling switches in half-bridge circuit

Growing community of inventors

Taipei, Taiwan

Yu-Jen Chen