Ebara Corporation

Other

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Fujimi Incorporated

Yu Ishii

Kenya Ito

Keisuke Uchiyama

Masayuki Nakanishi

Hiroyuki Kawasaki

Tetsuji Togawa

Makoto Kashiwagi

Norio Kimura

Kenichi Nagaoka

Katsuya Okumura

Kenichi Kobayashi

Hiroshi Tomita

Hiroyuki Yano

Hozumi Yasuda

Toshifumi Kimba

Hirokuni Hiyama

Atsushi Yoshida

Hisanori Matsuo

Masako Kodera

Takeshi Nishioka

Kunio Oishi

Fong-Jie Du

Koichi Takeda

Katsuhide Watanabe

Kuniaki Yamaguchi

Masaki Kinoshita

Hirohiko Ueda

Ryuichi Kosuge

Kazusei Tamai

Yoichi Shiokawa

Hitoshi Morinaga

Tsuneo Torikoshi

Katsutoshi Ono

Kenji Kodera

Ryo Kato

Kenichi Akazawa

Shunichi Aiyoshizawa

Hiroshi Asano

Hiroyuki Takenaka

Michiyoshi Yamashita

Manato Furusawa

Shozo Takahashi

Mika Suzuki

Jyoji Heianna

Shingo Ohtsuki

Hirotaka Satori

A local polishing system comprises: a particle estimation unit () for estimating the film thickness distribution of a wafer; a local polishing region setting unit () for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit () for selecting a polishing head based on the size of the local polishing region; a model storage () holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator () that puts an attribute of the local polishing region set by the local polishing region setting unit () into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter () for transmitting data of the polishing recipe to a local polishing module () that performs local polishing.

Substrate processing control system, substrate processing control method, and program

Provided is a top ring that ensures uniformly pressing a substrate against a polishing pad. A top ringfor holding a substrate WF includes a base membercoupled to a top ring shaft, an elastic filmthat is mounted to the base memberand forms a pressurization chamberfor pressurizing the substrate WF between the base memberand the elastic film, a substrate suction memberthat includes a porous memberincluding a substrate suction surfacefor suctioning the substrate WF and a pressure reducing portioncommunicating with a pressure reducing unit. The substrate suction memberis held to the elastic film

Top ring for holding a substrate and substrate processing apparatus

A polishing method capable of accurately determining a polishing end point of a substrate is disclosed. The method comprises: rotating a polishing table supporting a polishing pad; and polishing the substrate by pressing the substrate against a polishing surface of the polishing pad by a polishing head, wherein polishing the substrate includes: an oscillation polishing process of polishing the substrate while causing the polishing head to oscillate along the polishing surface; and a static polishing process of polishing the substrate with the oscillation of the polishing head stopped, the static polishing process is performed after the oscillation polishing process, and the static polishing process comprises determining a static polishing end point which is a point in time at which a rate of change of torque for rotating the polishing table has reached a change-rate threshold value.

Polishing method and polishing apparatus

Disclosed is a polishing head for a polishing apparatus for polishing a quadrangular substrate using a polishing pad attached to a polishing table, comprising a head body portion, a plurality of elastic bags disposed in a surface of the head body portion, which is to face the polishing table, and a substrate holding plate for holding the substrate, the substrate holding plate being pressed by the elastic bags in a direction away from the head body portion, the head body portion being provided with channels for bags, which are in communication with the respective elastic bags, the polishing head further including at least two support plates disposed between the elastic bags on one hand and the substrate holding plate on the other, the elastic bags being configured to press the substrate holding plate through the support plates.

Polishing head and polishing apparatus

The present invention relates to a chemical mechanical polishing (CMP) apparatus for polishing a workpiece, such as a metal body, to a mirror finish. The chemical mechanical polishing apparatus includes: a polishing pad () having an annular polishing surface () which has a curved vertical cross-section; a workpiece holder () for holding a workpiece (W) having a polygonal shape; a rotating device () configured to rotate the workpiece holder () about an axis of the workpiece (W); a pressing device () configured to press a periphery of the workpiece (W) against the annular polishing surface (); and an operation controller () configured to change a speed at which the rotating device () rotates the workpiece (W) according to a rotation angle of the workpiece (W). The pressing device () is disposed more inwardly than the workpiece holder () in a radial direction of the polishing table ().

Chemical mechanical polishing apparatus for polishing workpiece

A substrate processing apparatus for processing a substrate includes a setting device that sets a plurality of recipe items including operation conditions of the substrate processing apparatus and a recipe generating device that acquires a plurality of recipe models obtained by changing values of the plurality of recipe items and experimenting or simulating a processing result of the substrate and analyzes the plurality of recipe models to generate a recipe, the recipe generating device combining a part or all of the plurality of recipe models to generate the recipe such that a calculation value of a processing result of the substrate by the recipe satisfies a predetermined condition.

Substrate processing apparatus and storage medium having program stored therein

A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.

Substrate processing apparatus and substrate processing method

There is disclosed a substrate processing apparatus which can align a center of a substrate, such as a wafer, with a central axis of a substrate stage with high accuracy. The substrate processing apparatus includes: an eccentricity detector configured to obtain an amount of eccentricity and an eccentricity direction of a center of the substrate, when held on a centering stage, from a central axis of the centering stage; and an aligner configured to perform a centering operation of moving and rotating the centering stage until the center of the substrate on the centering stage is located on a central axis of a processing stage. The aligner is configured to calculate a distance by which the centering stage is to be moved and an angle through which the centering stage is to be rotated, based on an initial relative position of the central axis of the centering stage with respect to the central axis of the processing stage, the amount of eccentricity, and the eccentricity direction.

An apparatus and a method which can perform different processes, such as polishing and cleaning, on a surface of a substrate, such as a wafer, with a single processing head, and can process the surface of the substrate efficiently are disclosed. The apparatus includes: a substrate holder configured to hold a substrate and rotate the substrate; and a processing head configured to bring scrubbing tapes into contact with a first surface of the substrate to process the first surface. The processing head includes: pressing members arranged to press the scrubbing tapes against the first surface of the substrate; position switching devices configured to be able to switch positions of the pressing members between processing positions and retreat positions; tape feeding reels configured to feed the scrubbing tapes, respectively; and tape take-up reels configured to take up the scrubbing tapes, respectively.

Apparatus and method for processing a surface of a substrate

A method and an apparatus which can efficiently polish an entirety of a back surface, including an outermost area thereof, of a substrate while the back surface of the substrate faces downward are disclosed. The method includes rotating a substrate by rotating a plurality of rollers about their respective own axes while the rollers contact a periphery of the substrate with a back surface of the substrate facing downward; and polishing an entirety of the back surface of the substrate by moving a polishing tool relative to the substrate while supplying a liquid onto the back surface of the substrate and while placing the polishing tool in contact with the back surface of the substrate, the polishing tool being located at a lower side of the substrate.

Method and apparatus for polishing a substrate, and method for processing a substrate

A polishing method capable of polishing a substrate, such as a wafer, with low running costs is disclosed. A polishing method includes: rotating a substrate while holding a back-side surface of the substrate with a vacuum suction stage; rotating a polishing head holding a plurality of polishing tools; and polishing a front-side surface of the substrate by pressing the plurality of polishing tools, which are rotating, against the front-side surface of the substrate. The front-side surface is a surface on which interconnect patterns are to be formed.

Polishing method, polishing apparatus, and substrate processing system

An apparatus which can remove particles, such as polishing debris, from a back surface with high removal efficiency is provided. The apparatus includes: a substrate holder configured to rotate the substrate while holding the substrate with the back surface facing upward; a scrub cleaning tool configured to be rotatable; a two-fluid nozzle disposed above the substrate holder; and a housing defining a cleaning chamber in which the substrate holder, the scrub cleaning tool, and the two-fluid nozzle are located.

Apparatus and method for cleaning a back surface of a substrate

An apparatus which can polish an entirety of a surface of a substrate, such as a wafer, is disclosed. The apparatus includes a substrate holder configured to hold a substrate and rotate the substrate; and a polishing head configured to rub a polishing tool against a first surface of the substrate to polish the first surface. The substrate holder includes a plurality of rollers which can contact a periphery of the substrate. The plurality of rollers are rotatable about their respective own axes.

Apparatus and method for polishing a surface of a substrate

Growing community of inventors

Tokyo, Japan

Yu Ishii