Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Yu-Hung Liao

Chee-Wee Liu

Samuel C Pan

Min-Hung Lee

Sheng-Ting Fan

A semiconductor device includes a source and a drain and a channel disposed between the source and the drain, a first gate dielectric layer disposed on the channel, a first gate electrode disposed on the first gate dielectric layer, a second gate dielectric layer disposed on the first gate electrode, and a second gate electrode disposed on the second gate dielectric layer. The second gate dielectric layer is made of a ferroelectric material. A first area of a bottom surface of the first gate electrode which is in contact with the first gate dielectric layer where the is greater than a second area of a bottom surface of the second gate dielectric layer which is in contact with the first gate electrode.

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Toufen, Taiwan

Yu-Hung Liao