Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu Hung Chen

Chung-Long Chang

Tsung-Yu Yang

Chih-Ping Chao

Kuan-Chi Tsai

Wei-Kung Tsai

Kuo-Yu Cheng

Chun-Hong Chen

Chen-Yao Tang

An embodiment radio frequency area of an integrated circuit is disclosed. The radio frequency area includes a substrate having an implant region. The substrate has a first resistance. A buried oxide layer is disposed over the substrate and an interface layer is disposed between the substrate and the buried oxide layer. The interface layer has a second resistance lower than the first resistance. A silicon layer is disposed over the buried oxide layer and an interlevel dielectric is disposed in a deep trench. The deep trench extends through the silicon layer, the buried oxide layer, and the interface layer over the implant region. The deep trench may also extend through a polysilicon layer disposed over the silicon layer.

Integrated circuit using deep trench through silicon (DTS)

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Tainan, Taiwan

Yu Hung Chen