Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Huan Chen

Shang-Chieh Chien

Li-Jui Chen

Heng-Hsin Liu

Ming-Hsun Tsai

Cheng-Hsuan Wu

Wei-Shin Cheng

Cheng-Hao Lai

Yu-Kuang Sun

Yu-Fa Lo

Chiao-Hua Cheng

Chen-Shien Chen

Kuo-Ching Hsu

Hsin-Feng Chen

Yu-Chih Huang

Sheng-Kang Yu

Ya-An Peng

Shin-Puu Jeng

Po-Yao Lin

Shu-Shen Yeh

Ming-Chih Yew

Cheng-Lin Huang

Chin-Hua Wang

Wen-Yi Lin

Shyue-Ter Leu

Kuang-Chun Lee

Wei-Chun Yen

A photolithographic apparatus includes a droplet generator, a droplet generator maintenance system, and a controller communicating with the droplet generator maintenance system. The droplet generator maintenance system operatively communicates with the droplet generator, a coolant distribution unit, a gas supply unit, and a supporting member. The gas supply unit includes a heat exchange assembly and an air heating assembly. The coolant distribution unit is configured to control the temperature of the droplet generator within the acceptable droplet generator range.

Methods of servicing photolithographic apparatus

A chip package structure is provided. The chip package structure includes a first wiring substrate comprising a substrate, a first pad, a second pad, and an insulating layer. The first pad and the second pad are respectively over a first surface and a second surface of the substrate, the first surface is opposite to the second surface, the insulating layer is over the first surface and partially covers the first pad, and the first pad is wider than the second pad. The chip package structure includes a nickel-containing layer over the first pad. The chip package structure includes a conductive protection layer over the nickel-containing layer. The conductive protection layer has a curved surface, and a recess is surrounded by the curved surface and an inner wall of the insulating layer over the first pad.

Chip package structure with metal-containing layer

An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

Method and system for generating droplets for EUV photolithography processes

A chip package structure is provided. The chip package structure includes a wiring substrate including a substrate, a first pad, and a second pad. The first pad and the second pad are respectively over a first surface and a second surface of the substrate, and the first pad is narrower than the second pad. The chip package structure includes a nickel layer over the first pad. The nickel layer has a T-shape in a cross-sectional view of the nickel layer. The chip package structure includes a chip over the wiring substrate. The chip package structure includes a conductive bump between the nickel layer and the chip.

Chip package structure with nickel layer

A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. In some embodiments, a nozzle tube is arranged within the nozzle of the droplet generator, and the nozzle tube includes a structured nozzle pattern configured to provide an angular momentum to the target droplets.

Apparatus and method for generating extreme ultraviolet radiation

A semiconductor substrate stage for carrying a substrate is provided. The semiconductor substrate stage includes a base layer, a magnetic shielding layer disposed on the base layer, a carrier layer disposed on the magnetic shielding layer, a receiver disposed on the carrier layer, a storage layer disposed between the base layer and the magnetic shielding layer, and a magnetic shielding element disposed on the carrier layer and surrounding the receiver.

Substrate stage and substrate processing system using the same

A method for using an extreme ultraviolet radiation source is provided. The method includes performing a lithography process using an extreme ultraviolet (EUV) radiation source; after the lithography processes, inserting an extraction tube into a vessel of the EUV radiation source; and cleaning a collector of the EUV radiation source by using the extraction tube.

Method for using radiation source apparatus

In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.

Inspection tool for an extreme ultraviolet radiation source to observe tin residual

Droplet generator and method of servicing a photolithographic tool

A chip package structure is provided. The chip package structure includes a first wiring substrate including a substrate, a first pad, a second pad, and an insulating layer. The chip package structure includes a nickel-containing layer over the first pad. The chip package structure includes a conductive protection layer over the nickel-containing layer. The conductive protection layer includes tin, and a recess is surrounded by the conductive protection layer and the insulating layer over the first pad. The chip package structure includes a chip over the second surface of the substrate. The chip package structure includes a conductive bump between the second pad and the chip.

A semiconductor substrate stage for carrying a substrate is provided. The semiconductor substrate stage includes a base layer, a magnetic shielding layer disposed on the base layer, a carrier layer disposed on the magnetic shielding layer, and a receiver disposed on the carrier layer. The receiver is configured to receive a microwave signal from a signal source electrically isolated from the receiver, and the microwave signal is used for controlling the movement of the semiconductor substrate stage.

Substrate stage, substrate processing system using the same, and method for processing substrate

A chip package structure is provided. The chip package structure includes a wiring substrate including a substrate, a first pad, and a second pad. The first pad and the second pad are respectively over a first surface and a second surface of the substrate, and the first pad is narrower than the second pad. The chip package structure includes a conductive adhesive layer over the first pad. The conductive adhesive layer is in direct contact with the first pad. The chip package structure includes a nickel layer over the conductive adhesive layer. The chip package structure includes a chip over the wiring substrate. The chip package structure includes a conductive bump between the nickel layer and the chip. The conductive bump includes gold.

Chip package structure with conductive adhesive layer

A method includes moving a wafer stage to a first station on a table body of a lithography chamber; placing a wafer on a top surface of the wafer stage; emitting a first laser beam from a first laser emitter toward a first beam splitter on a first sidewall of the wafer stage, wherein a first portion of the first laser beam is reflected by the first beam splitter to form a first reflected laser beam, and a second portion of the first laser beam transmits through the first beam splitter to form a first transmitted laser beam; calculating a position of the wafer stage on a first axis based on the first reflected laser beam; after calculating the position of the wafer, moving the wafer stage to a second station on the table body; and performing a lithography process to the wafer.

Wafer stage and method thereof

A method for using an extreme ultraviolet radiation source is provided. The method includes assembling a first droplet generator onto a port of a vessel; ejecting a target droplet from the first droplet generator to a zone of excitation in front of a collector; emitting a laser toward the zone of excitation, such that the target droplet is heated by the laser to generate extreme ultraviolet (EUV) radiation; stopping the ejection of the target droplet; after stopping the ejection of the target droplet, disassembling the first droplet generator from the port of the vessel; after disassembling the first droplet generator from the port of the vessel, inserting a cleaning device into the vessel through the port; and cleaning the collector by using the cleaning device.

Growing community of inventors

Hsinchu, Taiwan

Yu-Huan Chen