Teledyne Scientific and Imaging, LLC

Hughes Electronics Corporation

Yu-Hua Kao Lin

Jeffrey DeNatale

Philip Stupar

Robert L Borwick, Iii

Alexandros Papavasiliou

Bruce Kevin Winker

Bing Wen

William E Tennant

Hector J De Los Santos

Donald E Cooper

Andrew H Kwon

John R Dunwoody

Eric D Ditmars

Sridhar Narayanaswamy

H&eacute;ctor J De Los Santos

A self-aligning hybridization method enabling small pixel pitch hybridizations with self-alignment and run-out protection. The method requires providing a first IC, the surface of which includes at least one electrical contact for connection to a mating IC, depositing an insulating layer on the IC's surface, patterning and etching the insulating layer to provide recesses in the insulating layer above each of the electrical contacts, and depositing a deformable conductive material in each of the recesses. A mating IC is provided which includes conductive pins positioned to align with the deformable conductive material in respective ones of the recesses on the first chip. The first and mating ICs are then hybridized by bringing the conductive pins into contact with the deformable conductive material in the recesses, such that the conductive material deforms and the pins make electrical contact with the first IC's electrical contacts.

Self-aligning hybridization method

An apparatus includes a chip-scale atomic clock (CSAC) alkali vapor cell seated on a silicon substrate that is suspended in a package by a metalized Parylene strap having Parylene anchors embedded in a silicon frame, the Parylene strap comprising an extended rigidizing structure, and a plurality of electrical pins extending into an interior of the package, the plurality of electrical pins in electrical communication with the CSAC cell through the metalized Parylene strap, where the CSAC cell is mechanically connected to the package and thermally insulated from the package.

Micro-scale system to provide thermal isolation and electrical communication between substrates

A hybridization method comprises providing a first IC, depositing a first metal layer over electrical contacts on the IC, depositing an insulating layer over the first metal layer and contacts, providing recesses in the insulating layer above each contact, and depositing metal such that the sidewalls of the recesses provide electrical continuity between the top of each recess and the electrical contact it is above. The recesses are backfilled with a sacrificial planarization material and planarized, and a second metal layer is deposited, patterned and etched over each backfilled recess to form openings over each recess and to separate the pixels. The sacrificial planarization material is removed to form compliant structures overhanging the recesses and thereby creating micro-sockets capable of receiving corresponding conductive pins associated with a mating IC. Electrical contact between the first and mating ICs is accomplished through shear between the pins and the micro-sockets.

Compliant micro-socket hybridization method

A microscale apparatus includes a microscale rigidized Parylene strap having a reinforcement structure extending from a first side of the strap, a first silicon substrate suspended by the microscale rigidized Parylene strap, the microscale rigidized Parylene strap conformally coupled to the first substrate, and a second substrate conformally coupled to the microscale rigidized Parylene strap to suspend the first silicon substrate through the microscale rigidized Parylene strap.

Provided is a compact, high-speed deformable mirror for use with an adaptive optic. The mirror or wavefront correction device corrects and/or compensates for wavefront aberrations present in a wavefront received by the optics. The mirror includes a deformable membrane which may be made of a semiconductive, metallic or insulating material. Positioned in close proximity to a front surface of the membrane is a transparent conductor, which may be covered by a window having an anti-reflective coating. A plurality of electrostatic actuators is located in close proximity to a back surface of the membrane, the conductor and actuators separated by a gap of approximately 10 &#x3bc;m. In operation, a bias voltage is applied to the transparent conductor and an actuator voltage is applied to the plurality of actuators. The resultant voltage differential across the membrane defines the amount of membrane deformation, which in turn compensates for distortions in a subsequently reflected wavefront.

Compact high-speed thin micromachined membrane deformable mirror

A method of directly and indirectly bonding a microwave substrate and a silicon substrate is described. The method for directly bonding a silicon substrate includes the steps of cleaning the microwave substrate and cleaning the silicon substrate. Then, the microwave substrate and the silicon substrate are stacked together. The stack is placed in a furnace. The temperature of the furnace is increased to a predetermined temperature at a predetermined rate. The temperature of the furnace is reduced at a second predetermined rate. The method of indirectly bonding includes sputtering a silicon dioxide layer on the microwave substrate and silicon substrate prior to placing them together.

Method of preparing silicon-on-insulator substrates particularly suited for microwave applications

A microwave microstrip/waveguide transition structure includes a substrate, an elongated microstrip layer residing on a surface of the substrate, and an elongated integral hollow waveguide on the surface of the substrate. The microstrip layer and a side of the hollow waveguide constitute a single continuous piece of metal. The transition structure is fabricated by providing a substrate, depositing a metallic layer on the substrate, and depositing a metallic hollow housing continuous with a portion of a length of the metallic layer. The metallic hollow waveguide bounded by the metallic layer and the metallic hollow housing and having a contained volume therewithin is thereby defined.

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Oak Park, CA, United States of America

Yu-Hua Kao Lin