Mediatek Corporation

United Microelectronics Corp.

Mediatek Singapore Pte. Ltd.

Yu-Hua Huang

Ming-Tzong Yang

Cheng-Chou Hung

Wei-Che Huang

Tzu-Hung Lin

Tung-Hsing Lee

Wen-Ching Tsai

Chien-Chih Lin

Hung-Lin Shih

Chiyuan Lu

Ruey-Beei Wu

Tien-Chang Chang

Kuei-Ti Chan

Tzu-Wen Chang

Sheng-Kai Chang

Yuan-Ting Huang

Guan-Jie Huang

Kuan-Wei Chen

Kai-Bin Wu

Teng Ma

Kai-Wen Liu

Po-Chao Tsao

Tao Cheng

Chin-Wei Hsu

Shi-Bai Chen

Ming-Jun Lin

Huei-Jing Yang

A transmission rate management method is provided. The transmission rate management method is applied to a transmission rate management device. The transmission rate management method includes the steps of calculating a total available data traffic of the transmission rate management device based on a data plan for the transmission rate management device, wherein the total available data traffic corresponds to a period of time; allocating to each of one or more client devices currently connected to the transmission rate management device one available data traffic corresponding to the period of time according to the total available data traffic; and adjusting a transmission rate of a client device of the one or more client devices based on a remaining data traffic of the available data traffic of the client device.

Transmission rate management method and device

A method of routing data packets for a router is provided. The router includes a software network address translator (NAT) and a hardware NAT. The method includes routing, by the software NAT, a first data packet based on a routing rule stored in the software NAT, wherein the software NAT has a routing rule removing function to remove the routing rule stored in the software NAT; sending, by the software NAT, the routing rule to the hardware NAT; storing the routing rule, by the hardware NAT, in the hardware NAT; and routing, by the hardware NAT instead of the software NAT, a second data packet based on the routing rule stored in the hardware NAT. The routing rule removing function of the software NAT for the routing rule stored in the software NAT is disabled.

Method and electronic device for saving power applied to a router

A communications apparatus and associated method communicating with at least one cellular network includes a radio transceiver and a processor. The communications apparatus includes a radio transceiver, capable of transmitting or receiving wireless radio frequency signals to or from a cellular network; and a processor. The processor is configured to: receive an incoming call request message that will trigger a Circuit Switch Fall Back (CSFB) procedure or a Evolved Packet System Fall Back (EPS FB) procedure from the cellular network via the radio transceiver, query a user to accept or reject the incoming call request before triggering the CSFB procedure or the EPS FB procedure, and determine whether to trigger the CSFB procedure or the EPS FB procedure based on a response to the query from the user.

Method for preventing an inter-rat change from being triggered and communications apparatus utilizing the same

A mobile communication device including a Radio Frequency (RF) device and a controller is provided. The controller activates a predetermine Application (APP), and provides a Packet-Switched (PS) data service for the predetermined APP using a first subscriber identity via the RF device. Also, the controller establishes a Radio Resource Control (RRC) connection using a second subscriber identity via the RF device to enable the mobile communication device to enter an RRC connected mode after the predetermined APP is activated, and keeps the mobile communication device in the RRC connected mode associated with the second subscriber identity while providing the PS data service for the predetermined APP using the first subscriber identity.

Apparatuses and methods for coordinating operations associated with multiple subscriber identities

A semiconductor component is provided. The semiconductor component includes a substrate and a pad. The pad has an upper surface and a slot, wherein the slot is recessed with respect to the upper surface.

Semiconductor component and manufacturing method thereof

A package structure comprising: a substrate, having at least one conductive units provided at a first surface of the substrate; at least one first die, provided on a second surface of the substrate; a connecting layer, provided on the first die; a second die, provided on the connecting layer, wherein the connecting layer comprises at least one bump for connecting the first die; and at least one bonding wire. The connecting layer has a first touch side and a second touch side, the first touch side contacts a first surface of the first die and the second touch side contacts a second surface of the second die, an area of the first touch side is smaller than which for the first surface of the first die, and a size of the first die equals to which of the second die.

Package structure

A communications apparatus communicating with at least one cellular network includes a radio transceiver and a processor. The radio transceiver is capable of transmitting or receiving wireless radio frequency signals to or from an air interface in the cellular network. The processor is configured to determine whether an inter-RAT change will be triggered in a subsequent procedure when the communications apparatus is in a connected mode. When the processor determines that an inter-RAT change procedure will be triggered, the processor is configured to selectively perform a predetermined procedure instead of the subsequent procedure to avoid the inter-RAT change.

Method for preventing an inter-RAT change from being triggered and communications apparatus utilizing the same

A method for forming a seal ring structure provides a semiconductor substrate having a first doping region formed over a top portion thereof. The method forms a plurality of patterned photoresist layers over the semiconductor substrate, encircling the semiconductor substrate, wherein each of the patterned photoresist layers has a plurality of parallel strip portions extending along a first direction and a plurality of bridge portions formed between the parallel strip portions, and then performs an etching process to a first doping region of the substrate. The method then removes the first doping region not covered by the patterned photoresist layers and forms a plurality of patterned first doping regions. The method then removes the patterned photoresist layers and forms an isolation region between and adjacent to the patterned first doping regions. Finally, the method forms a plurality of interconnect elements over the semiconductor substrate.

Guard ring structure and method for forming the same

A guard ring structure having a semiconductor substrate with a circuit region encircled by a first ring and a second ring. At least one of the first and second ring includes: a plurality of separated doping regions formed in various top portions of the semiconductor substrate, providing P-N junction or N-P junction on bottom of the plurality of separated doping regions; and an interconnect element formed over the semiconductor substrate, covering at least portion of the plurality of separated doping regions.

The invention provides a semiconductor package assembly with a TSV interconnect. The semiconductor package assembly includes a first semiconductor package mounted on a base, having: a semiconductor die, a semiconductor substrate, and a first array of TSV interconnects and a second array of TSV interconnects formed through the semiconductor substrate, wherein the first array and second array of TSV interconnects are separated by an interval region. The assembly further includes a second semiconductor die mounted on the first semiconductor package, having a ground pad thereon. One of the TSV interconnects of the first semiconductor package has a first terminal coupled to the ground pad of the second semiconductor die and a second terminal coupled to an interconnection structure disposed on a front side of the semiconductor substrate.

Semiconductor package assembly with through silicon via interconnect

A semiconductor package structure having a substrate, wherein the substrate has a front side and a back side, a through silicon via (TSV) interconnect structure formed in the substrate, and a first guard ring doped region and a second guard ring doped region formed in the substrate. The second guard ring doped region is disposed between the first guard ring doped region and the TSV interconnect structure.

Semiconductor package structure and method for forming the same

The invention provides a semiconductor package with a through silicon via (TSV) interconnect. An exemplary embodiment of the semiconductor package with a TSV interconnect includes a semiconductor substrate, having a front side and a back side. A contact array is disposed on the front side of the semiconductor substrate. An isolation structure is disposed in the semiconductor substrate, underlying the contact array. The TSV interconnect is formed through the semiconductor substrate, overlapping with the contact array and the isolation structure.

Semiconductor package with through silicon via interconnect

A semiconductor structure includes a semiconductor substrate and a conductive element formed in a portion of the semiconductor substrate. The semiconductor structure further includes a plurality of insulating elements formed in portions of the semiconductor substrate at a first region surrounding the conductive element and a semiconductor device formed over a portion of the semiconductor substrate at a second region adjacent to the first region. The first region is formed between the conductive element and the second region.

Semiconductor structure with through-silicon via

A method for forming a semiconductor package structure is provided. The method for forming a semiconductor package structure includes providing a substrate, wherein the substrate has a front side and a back side, forming a first guard ring doped region and a second guard ring doped region in the substrate, wherein the first guard ring doped region and the second guard ring doped region have different conductive types, forming a trench through the substrate from a back side of the substrate, conformally forming an insulating layer lining the back side of the substrate, a bottom surface and sidewalls of the trench, removing a portion of the insulating layer on the back side of the substrate to form a through via, and forming a conductive material in the through via, wherein a through silicon via (TSV) interconnect structure is formed by the insulating layer and the conductive material.

Growing community of inventors

Hsinchu, Taiwan

Yu-Hua Huang