Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Hsun Wu

Chih-Tsung Shih

Bo-Tsun Liu

Tsung-Chuan Lee

Hao-Ming Chang

Chien-Hung Lai

Chia-Shih Lin

Yu-Hsin Hsu

Hsuan-Wen Wang

A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.

Extreme ultraviolet lithography method, extreme ultraviolet mask and formation method thereof

A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.

Photomask with enhanced contamination control and method of forming the same

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Taipei, Taiwan

Yu-Hsun Wu