Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Hsun Chih

Yun-Wei Cheng

Sheng-Chau Chen

Sheng-Chan Li

Chao-Ching Chang

Chih-Lung Cheng

Tsung-Wei Huang

Yen-Chang Chen

Wen-Jen Tsai

Cheng Han Lin

An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.

Isolation structure having an air gap to reduce pixel crosstalk

Growing community of inventors

Kaohsiung, Taiwan

Yu-Hsun Chih