Industrial Technology Research Institute

Yu-Hsuan Lu

Yi-Keng Fu

A light emitting diode including a substrate, a p-type and n-type semiconductor layers, an active layer, an interlayer, an electron barrier layer, a first and a second electrodes are provided. The n-type semiconductor layer is disposed on the sapphire substrate. The active layer has an active region with a defect density greater than or equal to 2&#xd7;10/cm. The active layer is disposed between the n-type and p-type semiconductor layers. The wavelength of light emitted by the active layer is &#x3bb;, and 222 nm&#x2266;&#x3bb;&#x2266;405 nm. The active layer includes i quantum barrier layers and (i&#x2212;1) quantum wells, each quantum well is disposed between any two quantum barrier layers, and i&#x2267;2. N-type dopant is doped in at least k layers of the i quantum barrier layers, wherein k is a natural number and k&#x2267;1, when i even, k&#x2267;i/2, and when i is odd, k&#x2267;(i&#x2212;1)/2.

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Kaohsiung, Taiwan

Yu-Hsuan Lu