Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Hsin Chan

Yu-Yu Chen

Kuan-Wei Huang

Chang-Wen Chen

Po-Hsiang Huang

Jr-Hung Li

Ting-Kui Chang

Cai-Ling Wu

Jay Chiu

Ching-Yu Chang

Jiing-Feng Yang

Chia-Wei Wu

Meng-Shu Lin

Wei-Hao Lin

In one example aspect, the present disclosure is directed to a method. The method includes receiving a workpiece having a conductive feature over a semiconductor substrate, forming a sacrificial material layer over the conductive feature, removing first portions of the sacrificial material layer to form line trenches and to expose a top surface of the conductive feature in one of the line trenches; forming line features in the line trenches, removing second portions of the sacrificial material layer to form gaps between the line features, and forming dielectric features in the gaps, the dielectric features enclosing an air gap.

Devices with reduced capacitances

A semiconductor structure and method of forming the same are provided. The method includes: forming a plurality of mandrel patterns over a dielectric layer; forming a first spacer and a second spacer on sidewalls of the plurality of mandrel patterns, wherein a first width of the first spacer is larger than a second width of the second spacer; removing the plurality of mandrel patterns; patterning the dielectric layer using the first spacer and the second spacer as a patterning mask; and forming conductive lines laterally aside the dielectric layer.

Semiconductor structure and methods of forming the same

Growing community of inventors

Hsinchu, Taiwan

Yu-Hsin Chan