Chunghwa Picture Tubes, Ltd.

National Yang Ming Chiao Tung University

Feng Chia University

Maxchip Electronics Corp.

Yu-Hsien Chen

Huai-An Li

Sheng-Fa Liu

Der-Chun Wu

Shin-Chuan Chiang

Yen-Yu Huang

Ya-Ju Lu

Yu-Cheng Lo

Feng-Lin Hsu

Jiun-Ming Wang

Chun-Yu Shen

Bao-Sian Ciou

Huang-Ming Philip Chen

En-Chih Liu

Po-Lung Chen

Hong-cheu Lin

Jin-Wei Chang

Huai-an Li

Jen-Yao Hsu

Hong-Xian Wang

Cheng-Jung Yang

Sheng-fa Liu

Kuo-Hsing Tseng

Sin-min Fuh

Po-jen Yang

Shin-chieh Chien

Hsin-Hung Liu

Hui-Yu Chen

Ji-Yi Chou

Jia-Liang Lai

Yi-Hsien Lin

A method manufacturing a thin film transistor is provided. A gate, a first insulation layer covering the gate, a semiconductor layer over the gate, and a first photoresist pattern are sequentially formed on a substrate. The semiconductor layer is patterned into a channel layer by using the first photoresist pattern as a mask and the first photoresist pattern is subsequently shrunken to remain a portion of the first photoresist pattern on the channel layer. A conductive material layer covering the remained portion of the first photoresist pattern, the channel layer and the first insulation layer is patterned by using a second photoresist pattern as a mask to form a source and a drain separated by a gap region exposing the remained portion. The second photoresist pattern and the remained portion are removed by performing a stripping process to expose the channel layer between the source and the drain.

Method of manufacturing a thin film transistor and a pixel structure

A double thin film transistor includes a first semiconductor layer, a gate, a second semiconductor layer, a first insulating layer, a second insulating layer, a first source, a first drain, a second source and a second drain. The first semiconductor layer is disposed over a substrate. The gate is disposed over the first semiconductor layer. The second semiconductor layer is disposed over the gate, and the first and second semiconductor layers are the same conductive type. The first insulating layer is disposed between the first semiconductor layer and the gate. The second insulating layer is disposed between the gate and the second semiconductor layer. The first source and the first drain are disposed between the substrate and the second insulating layer. The second source and the second drain are disposed over the second insulating layer.

Double thin film transistor structure with shared gate

The thin film transistor includes a gate, a gate insulating layer, a semiconductor layer, and a source and a drain. The gate insulating layer covers the gate. The semiconductor layer is located on the gate insulating layer which is disposed above the gate. The source and the drain are disposed above the gate insulating layer and are electrically connected to the semiconductor layer, respectively. The source and the drain are respectively located in different layers. A first contact resistance is existed between the semiconductor layer and the source, a second contact resistance is existed between the semiconductor layer and the drain, and. the first contact resistance is less than the second contact resistance.

Thin film transistor

A method of manufacturing a mold includes following steps. Providing a solution, which includes a solvent, a solute and a plurality of nanoparticles. Providing a first substrate. Spin coating the solution on the first substrate, and then vaporizing the solvent to form a first mold on the first substrate. Thus, an upper surface of the first mold has a plurality of first porous structures. The present invention further includes forming an optical film having protrusion patterns with the aforementioned mold.

Method of manufacturing mold and method of forming optical film by mold

An ambit light sensor with a function of IR sensing and a method of fabricating the same are provided. The ambit light sensor includes a substrate, an ambit light sensing structure, an infrared ray (IR) sensing structure, and a dielectric layer. The ambit light sensing structure is located over the substrate for sensing and filtering visible light. The IR sensing structure is located in the substrate under the ambit light sensing structure for sensing IR. The dielectric layer is located between the ambit light sensing structure and the IR sensing structure.

Ambit light sensor with function of IR sensing

A manufacturing method for a TFT array substrate includes providing a substrate; defining a plurality of normal alignment regions and a plurality of abnormal alignment regions on the substrate; forming an insulating layer and a transparent conductive layer on the substrate; performing a patterning process to at least one of the insulating layer and the transparent conductive layer to form a plurality of alignment structures in each abnormal alignment region; forming an alignment material layer on the substrate, the alignment material layer having a plurality of first alignment slits formed along the alignment structures in each of the abnormal alignment regions; and performing a rubbing alignment process to form a plurality of second alignment slits on the alignment material layer in each of the normal alignment regions along a alignment direction.

Manufacturing method of thin film transistor array substrate

The present invention relates to photo-crosslinkable liquid crystal monomers with optical activity. The liquid crystal monomers contains one chiral center with an acrylate group or terminal diacrylate groups, and terminal dibenzene rings are introduced in order to extend its hard segment for the purpose of getting a wider liquid crystalline phase. By introducing the liquid crystal monomers, the room temperature nematic liquid crystal or the cholesteric liquid crystal may have a better mutual solubility and a wider, steadier structure of liquid crystal. The liquid crystal monomers have the following formula structure: 

Photo-crosslinkable liquid crystal monomers with optical activity

A blue phase liquid crystal composition includes a chiral dopant, a positive liquid crystal component and a negative liquid crystal component. The positive liquid crystal component includes at least one positive liquid crystal material, has a positive dielectric anisotropy and has no blue phase properties with respect to the chiral dopant. In addition, the negative liquid crystal component includes at least one negative liquid crystal material, has a negative dielectric anisotropy and has no blue phase properties with respect to the chiral dopant, so that the blue phase liquid crystal composition has a dielectric anisotropy between 0.5 and 14 and a blue phase temperature range larger than 3&#xb0; C.

Blue phase liquid crystal composition and method for forming blue phase liquid crystal

A thin film transistor (TFT) array substrate includes a substrate having a plurality of normal alignment regions, a plurality of abnormal alignment regions, and a device region defined thereon, a plurality of scan lines, a plurality of data lines, a plurality of storage electrode lines, and a plurality of switch devices positioned in the device region, a plurality of alignment structures positioned in the abnormal alignment regions, and an alignment layer formed on the substrate and the alignment structures. The alignment layer further includes a plurality of first alignment slits covering the alignment structures in the abnormal alignment regions and a plurality of second alignment slits in the normal alignment regions. A depth and a width of the second alignment slits are identical to a depth and a width of the first alignment slits.

Thin film transistor array substrate and manufacturing method thereof

A reflective liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer, a first alignment layer, and a second alignment layer. The first substrate and the second substrate are disposed oppositely to each other. The liquid crystal layer is disposed between the first substrate and the second substrate. The liquid crystal layer includes a plurality of liquid crystal molecules for reflecting light within a wavelength range and allowing light beyond the wavelength range to pass through. The second alignment layer is disposed on an inner side of the first substrate facing the second substrate, and the second alignment layer is employed to absorb the light passing through the liquid crystal layer and align the liquid crystal molecules.

Reflective liquid crystal display device and manufacturing method thereof

A method of fabricating a color filter is provided. First, a substrate having a light shielding layer formed thereon is provided, wherein the light shielding layer is adopted for defining a plurality of sub-pixel regions on the substrate. Next, a hydrophobic layer is formed on the light shielding layer by stencil printing, or a surface silylation treatment is carried out to clean the light shielding layer by inkjet printing. Next, a color filter layer is formed in the sub-pixel regions. Thus, fabrication method of the present invention is capable of reducing the possibility of intermixing the color ink between adjacent sub-pixel regions.

Method of fabricating color filter

Growing community of inventors

Kaohsiung, Taiwan

Yu-Hsien Chen