Macronix International Co., Ltd.

Yu-Hsiang Yeh

Tzung-Ting Han

Hong-Ji Lee

Yu-Fong Huang

Chih-Chin Chang

Lo Yueh Lin

A memory device includes a first stack structure, a second stack structure, a channel pillar, a storage layer, and a conductive pillar. The first stack structure includes a first insulating layer and a first conductive layer located on the first insulating layer. The second stack structure is located on the first stack structure and includes a plurality of second conductive layers and a plurality of second insulating layers which alternate with each other. The channel pillar penetrates through the second stack structure and extends to the first stack structure. The storage layer is located between the channel pillar and the first stack structure and between the channel pillar and the second stack structure. The conductive pillar is located in the first conductive layer and electrically connected to the first conductive layer and the substrate.

Growing community of inventors

Miaoli County, Taiwan

Yu-Hsiang Yeh