Industrial Technology Research Institute

Wistron Neweb Corporation

National Cheng-kung University

Yu-Hsiang Chang

Wei-Hung Kuo

Hung-Lieh Hu

Ming-Hsien Wu

Chen-Peng Hsu

Yao-Jun Tsai

Shih-Yi Wen

Rong Xuan

Yih-Der Guo

Jenq-Dar Tsay

Chih-Hao Hsu

Hsun-Chih Liu

Chu-Li Chao

Chun-I Wu

Suh-Fang Lin

Chi-Chin Yang

Chu-Yin Hung

Kai-Ling Liang

Hui-Tang Shen

Re-Ching Lin

Jung-Chun Huang

Chun-Ying Chen

Sheng-Huei Kuo

Jui-Chih Chang

Wei-Kai Chen

A display device and a projector are provided. The display device includes a pixel light-emitting panel and multiple color conversion panels. The pixel light-emitting panel includes an N1 number of light-emitting pixel units distributed in an array, and the light-emitting pixel units are driven to emit light through a driver. A first color conversion panel includes an N2 number of first color pixels and an N3 number of first transparent pixels. The first color pixels and the first transparent pixels are disposed relative to the light-emitting pixel units. A second color conversion panel includes an N4 number of second color pixels and an N5 number of second transparent pixels. The second color pixels and the second transparent pixels are disposed relative to the light-emitting pixel units. The lights generated by at least part of the light-emitting pixel units sequentially pass through the first color pixels and the second transparent pixels to achieve the color conversion. The lights generated by at least part of the light-emitting pixel units sequentially pass through the first transparent pixels and the second color pixels to achieve the color conversion.

Display device and projector

A micro device structure including a device and a fixed structure is provided. The device has an upper surface, a lower surface, and a first side surface. The lower surface is opposite to the upper surface. The first side surface connects the upper surface and the lower surface. The fixing structure includes a connecting portion and a first turning portion. The connecting portion extends at least from the upper surface of the device to the first side surface. The first turning portion is in contact to be connected with a first end of the connecting portion and extends outward from the first side surface to be away from the first side surface. The first end of the connecting portion is located on the first side surface between the upper surface and the lower surface. A display apparatus is also provided.

Micro device structure and display apparatus

A wireless device includes a first transceiver circuit, a power splitter, a first directional antenna, and a second directional antenna. The first directional antenna is connected to a second end of the power splitter and has a first feeding portion and a first radiation unit, and the first feeding portion has a first line length. The second directional antenna is connected to a third end of the power splitter and has a second feeding portion and a second radiation unit, and the second feeding portion has a second line length. A phase difference is provided between the first directional antenna and the second directional antenna. The first transceiver circuit forms, through the first directional antenna, the second directional antenna and the predetermined phase difference, a predetermined pattern to transmit or receive signals, and the predetermined pattern has omnidirectionality.

Wireless device

A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.

Light emitting diode

A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.

Nitride semiconductor light emitting device with magnetic film

A method of manufacturing a light emitting diode element is provided. A first patterned semi-conductor layer, a patterned light emitting layer, and a second patterned semi-conductor layer are sequentially formed on an epitaxy substrate so as to form a plurality of epitaxy structures, wherein the first patterned semi-conductor layer has a thinner portion in a non-epitaxy area outside the epitaxy structures. A passivation layer covering the epitaxy structures and the thinner portion is formed. The passivation layer covering on the thinner portion is partially removed to form a patterned passivation layer. A patterned reflector is formed directly on each of the epitaxy structures. The epitaxy structures are bonded to a carrier substrate. A lift-off process is performed to separate the epitaxy structures from the epitaxy substrate. An electrode is formed on each of the epitaxy structures far from the patterned reflector.

Method of manufacturing a light emitting diode element

Growing community of inventors

Hsinchu, Taiwan

Yu-Hsiang Chang