Nichia Corporation

Yu Higuchi

Masafumi Kuramoto

Kunimichi Omae

A wavelength conversion member containing a fluorescent material having, for example, a perovskite-type structure maintained with high light emission intensity; a light emitting device; and a method for producing a wavelength conversion member. The wavelength conversion member includes a translucent member containing a resin, a wavelength conversion layer containing a fluorescent material having, for example, a perovskite-type structure, and a composition of ABX, and a first intermediate layer between the translucent member and the wavelength conversion layer. The method for producing a wavelength conversion member includes forming a first intermediate layer on a surface of a first translucent member containing a resin, and forming a first wavelength conversion layer containing a first fluorescent material having, for example, a perovskite-type structure on a surface of the first intermediate layer.

Wavelength conversion member, light emitting device, and method for producing wavelength conversion member

Disclosed is a surface emitting laser element capable of reducing threshold current. A surface emitting laser element according to an embodiment includes a semiconductor portion having a first semiconductor layer and a second semiconductor layer, a first reflector disposed at the first semiconductor layer side of the semiconductor portion, and a second reflector disposed at the second semiconductor layer side of the semiconductor portion. Particularly includes a second electrode disposed between the second semiconductor layer and the second reflector and connected to the second semiconductor layer, a connecting electrode disposed laterally around the second reflector and connected to the second electrode, and a current confinement portion disposed between the second semiconductor layer and the connecting electrode and capable of reflecting light from the semiconductor portion.

Surface emitting laser element

A nitride semiconductor laser device includes: a stack, the stack including an n-type layer and a p-type layer each including a nitride semiconductor; an n-electrode electrically coupled to the n-type layer; a p-electrode electrically coupled to the p-type layer; and a thermally conductive portion disposed in contact with the p-type layer in a region which is different from the region where the p-electrode is connected, wherein the thermally conductive portion is electrically insulated from the p-electrode. Manufacturing steps specific to nitride semiconductors are employed to form the device. An optical apparatus, such as an optical disc device, a display device, or a lighting device includes such a nitride laser device and depends its functions thereto.

Nitride semiconductor laser device

A method of manufacturing a nitride semiconductor light emitting element includes: forming a stacked layer body of a nitride semiconductor having a second conductive-type layer, a light emitting layer, and a first conductive-type layer stacked on a growth substrate in this order; forming a first Bragg reflector made of a dielectric multilayer film above the first conductive-type layer; forming a first electrode over the first Bragg reflector with the first electrode being electrically connected to the first conductive-type layer; bonding the stacked layer body to a supporting substrate via the first Bragg reflector and the first electrode; removing the growth substrate from the stacked layer body to expose the second conductive-type layer; and forming over the exposed second conductive-type layer a second electrode and a second Bragg reflector made of a dielectric multilayer film so that the second Bragg reflector faces the first Bragg reflector across the stacked layer body.

Growing community of inventors

Anan, Japan

Yu Higuchi