Phison Electronics Corporation

Yu-Heng Liu

Wei Hung Lin

Yu-Siang Yang

An-Cheng Liu

Ting-Chien Zhan

Chun-Hsi Lai

Yao-Hsuan Li

A memory management method, a memory storage apparatus and a memory control circuit unit are disclosed. The method includes: sending a plurality of read command sequences including a first read command sequence and a second read command sequence, and the first read command sequence is configured to instruct a performing of a first read operation on a first physical unit of a rewritable non-volatile memory module, and the second read command sequence is configured to instruct a performing of a second read operation on the first physical unit; determining a system parameter according to a time interval between a first read time point corresponding to the first read operation and a second read time point corresponding to the second read operation; and instructing the rewritable non-volatile memory module to perform a specific operation according to the system parameter.

Memory management method, memory storage apparatus and memory control circuit unit

A data reading method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: receiving a read command from a host system, and the read command instructs reading data from at least one logical unit, and the logical unit is mapped to a first physical unit; obtaining state information of at least two neighboring memory cells in the first physical unit; determining an electrical parameter offset value corresponding to the neighboring memory cells according to the state information; and sending a read command sequence according to the electrical parameter offset value, and the read command sequence instructs reading the first physical unit based on at least one electrical parameter, and the electrical parameter is controlled by the electrical parameter offset value.

Data reading method, memory storage device, and memory control circuit unit

A memory control method, a memory storage device, and a memory control circuit unit are provided. The memory control method includes: programming multiple first memory cells in a first physical erasing unit in a rewritable non-volatile memory module; and applying an electronic pulse to at least one word line in the rewritable non-volatile memory module. The at least one word line is coupled to multiple second memory cells in the first physical erasing unit. The second memory cells include the first memory cells. The electronic pulse is not configured to read, program, or erase the second memory cells.

Memory control method, memory storage device, and memory control circuit unit

A flash memory control method, a flash memory storage device and a flash memory controller are provided. The method includes the following. A flash memory module is instructed to perform a data merge operation to copy first data in a first physical unit into at least one second physical unit. After the first data is copied and before the first physical unit is erased, another programming operation is performed on the first physical unit to change a data storage state of at least a part of memory cells in the first physical unit from a first state into a second state. After the first physical unit is programmed, an erase operation is performed on the first physical unit.

Growing community of inventors

Hsinchu County, Taiwan

Yu-Heng Liu