Samsung Electronics Co., Ltd.

Yu Gyun Shin

Sangjin Hyun

Guk-Hyon Yon

Ji-Sang Yahng

Gyoung Ho Buh

Jong Wook Lee

Jae Young Park

Yong Hoon Son

Cha Dong Yeo

A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.

Method of increasing a free carrier concentration in a semiconductor substrate

Provided are improved methods for forming silicon films, particularly single-crystal silicon films from amorphous silicon films in which a single-crystal silicon substrate is prepared by removing any native oxide, typically using an aqueous HF solution, and placed in a reaction chamber. The substrate is then heated from about 350&#xb0; C. to a first deposition temperature under a first ambient to induce single-crystal epitaxial silicon deposition primarily on exposed silicon surfaces. The substrate is then heated to a second deposition temperature under a second ambient that will maintain the single-crystal epitaxial silicon deposition on exposed single-crystal silicon while inducing amorphous epitaxial silicon deposition on insulating surfaces. The amorphous epitaxial silicon can then be converted to single-crystal silicon using a solid phase epitaxy process to form a thin, high quality silicon layer. The first and second ambients include at least one silicon source gas and may include a non-oxidizing carrier gas.

Method for manufacturing a silicon structure

Growing community of inventors

Sungnam-si, South Korea

Yu Gyun Shin