Samsung Display Co., Ltd.

Yu Gwang Jeong

Su Bin Bae

Sang Gab Kim

Shin Il Choi

Joon Geol Lee

Yun Jong Yeo

Sung Won Cho

Hyun Min Cho

Sang-Gab Kim

Hong-Kee Chin

Seung-Ha Choi

Shin-Il Choi

Dong-Ju Yang

Jung-Suk Bang

Yun-Jong Yeo

Ki-Yeup Lee

Jae Hwan Chu

Da Woon Jung

Seon Il Kim

A display device includes a first electrode and a second electrode, a first insulating layer covering the first electrode and the second electrode, light emitting elements disposed on the first insulating layer, a first connection electrode disposed on the first electrode and contacting an end of each of the light emitting elements, a second connection electrode spaced apart from the first connection electrode and disposed on the second electrode and contacting another end of each of the light emitting elements, a second insulating layer disposed on the first insulating layer and at least partially covering the first connection electrode and the second connection electrode, and a third insulating layer disposed on part of the second insulating layer, wherein the second insulating layer comprises an opening overlapping a part between the first connection electrode and the second connection electrode spaced apart from each other.

Display device and method of fabricating the same

A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

Light emitting diode device and method of manufacturing the same

A display device is disclosed that includes a substrate, a semiconductor layer, a first conductive layer, and a first gate insulating layer. The semiconductor layer is disposed on the substrate and includes a first area and a second area. The first conductive layer is disposed on the semiconductor layer and includes a first gate pattern overlapping the first area and a second gate pattern overlapping the second area. The first gate insulating layer is disposed between the semiconductor layer and the first conductive layer and includes a first insulating layer overlapping the first area and the second area, a second insulating layer overlapping the first area and the second area, and a third insulating layer not overlapping the first area but overlapping the second area. The second insulating layer is disposed between the first insulating layer and the third insulating layer, and has a dielectric constant greater than that of the third insulating layer.

A display device includes a substrate and a display element layer on the substrate. The display element layer includes: first and second electrodes extending along a first direction and spaced apart from each other in a second direction; and light emitting elements electrically connected to the first and second electrodes. The first electrode has a first convex portion convex toward the second electrode and a first concave portion concave in a direction away from the second electrode, and the second electrode has a second convex portion convex toward the first electrode and a second concave portion concave in a direction away from the first electrode. The light emitting elements includes a first and second light emitting elements, respectively close to the first concave portion and the second concave portion based on an imaginary extension line extending in the first direction between the first electrode and the second electrode.

Display device and manufacturing method thereof

A display device may include a substrate, an active pattern layer, a gate insulating layer, a first metal pattern layer, an interlayer insulating layer, a second metal pattern layer, and a passivation film. The active pattern layer may be disposed on the substrate. The gate insulating layer may be disposed on the active pattern layer. The first metal pattern layer may be disposed on the gate insulating layer. The interlayer insulating layer may be disposed on the first metal pattern layer. The second metal pattern layer may be disposed on the interlayer insulating layer. The passivation film may be disposed on the side wall of the second metal pattern layer.

A method of fabricating a thin film transistor array substrate is presented. The method entails forming a gate interconnection line on an insulating substrate, forming a gate insulating layer on the gate interconnection line, forming a semiconductor layer and a data interconnection line on the semiconductor layer, sequentially forming multiple passivation layers, etching the passivation layers down to a drain electrode that is an extension of the data interconnection line. The portion of the drain electrode that is exposed at this stage is a part of the drain electrode-pixel electrode contact portion. A pixel electrode is formed connected to the drain electrode. Two of the passivation layers have the same composition but are processed at different temperatures. A thin film transistor prepared in the above manner is also presented.

Method of fabricating a thin film transistor array substrate

Growing community of inventors

Anyang-si, South Korea

Yu Gwang Jeong