Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Displayco., Ltd.

Yu-Gwang Jeong

Sang-Gab Kim

Shin-Il Choi

Sang Gab Kim

Hong-Kee Chin

Seung-Ha Choi

Min-Seok Oh

Shin Il Choi

Hyun Min Cho

Sang Ho Park

Yong Su Lee

Chong Sup Chang

Yoon Ho Khang

Hyun Jae Na

Myoung Geun Cha

Sanggab Kim

Sung-Hoon Yang

Byeong-Beom Kim

Joo-han Kim

Jang-Soo Kim

Ki-Hun Jeong

Wooyong Sung

Dae-Ho Kim

Woo-Geun Lee

Young-Wook Lee

Shi-Yul Kim

Jong-Hyun Choung

Taewook Kang

Kap-Soo Yoon

Jae-Hong Kim

Taesung Kim

Tae Sung Kim

Jong-in Kim

Hyunmin Cho

Bong-Kyun Kim

Dongmin Lee

Jae-Hyoung Youn

Joo-Hyung Lee

Dong-Hoon Lee

Jin Hwan Choi

Jeong-Min Park

Hyang-Shik Kong

Joonyong Park

Jae-Ho Choi

Hyuneok Shin

Ji Hun Kim

Tae An Seo

Joo Hyung Lee

Woong Sik Kim

Su Bin Bae

Dong-Ju Yang

Jae Neung Kim

Ki-Yeup Lee

Ji-Young Park

Se Hwan Yu

Dong Jo Kim

Sungwon Cho

Dae Ho Kim

Yun-Jong Yeo

Jean-Ho Song

Seon-Il Kim

Joon Geol Lee

Yun Jong Yeo

Yang-Ho Bae

Yunjong Yeo

Seung-Hwan Shim

Jung-Suk Bang

Ho-Jun Lee

Eun-Guk Lee

Sun-Young Hong

Sung-Ryul Kim

Hee-Joon Kim

Hwa-Yeul Oh

Woong-Kwon Kim

Chang-Hoon Kim

Yeo-Geon Yoon

Jung-Ha Son

Yong-Mo Choi

Dae Won Choi

Myoung-Geun Cha

O-Sung Seo

Kyungseop Kim

Sangwon Shin

Duk-Sung Kim

Joo-Ae Youn

Juhyun Lee

Jungha Son

Jin-Su Byun

Yui-Ku Lee

Pil-Sang Yun

Sangwoo Sohn

Yoon-Ho Kang

Gugrae Jo

Jung Ha Son

Yong-Hwan Ryu

Si Kwang Kim

Sukyoung Yang

Changoh Jeong

Tae-Woo Kim

Lei Xie

A display device includes a transistor disposed on a substrate, an organic layer disposed on the transistor and defining grooves, a first pixel electrode disposed on the organic layer, electrically connected to the transistor, and including a pixel metal layer and a pixel protective layer, the pixel protective layer including at least one of an oxide and a halide and surrounding the pixel metal layer, and a dummy electrode disposed on the organic layer, spaced apart from the transistor, and including a dummy metal layer and a dummy protective layer, the dummy protective layer including at least one of an oxide and a halide and surrounding the dummy metal layer.

Display device and method of manufacturing the same

A display device includes a substrate, an active pattern disposed on the substrate, a gate electrode overlapping the active pattern, an inorganic insulation layer covering the active pattern, a source metal pattern and an etch-delaying pattern. The source metal pattern includes a first portion that is disposed on the inorganic insulation layer, and a second portion that passes through the inorganic insulation layer and electrically contacts the active pattern. The etch-delaying pattern is disposed between the active pattern and the first portion of the source metal pattern, contacts the second portion of the source metal pattern, and includes a different material from the inorganic insulation layer.

Display device and method for manufacturing the same

A method of manufacturing a display panel includes providing an insulating substrate that includes a hole area, a display area that surrounds the hole area, and a peripheral area adjacent to the display area, forming a semiconductor pattern in the display area, forming an insulating layer, forming contact holes in the insulating layer that expose portions of the semiconductor pattern, and forming a module hole by etching a portion of the insulating layer and a portion of the insulating substrate that overlap the hole area.

Method of manufacturing display panel and display apparatus including the display panel

A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Thin film transistor and thin film transistor array panel including the same

A display substrate includes a substrate, a first gate electrode on the substrate, a first gate insulating layer on the first gate electrode, an active layer on the first gate insulating layer, a second gate insulating layer on the active layer, a second gate electrode on the second gate insulating layer, an interlayer insulating layer on the second gate electrode, a first electrode on the interlayer insulating layer to contact a top surface, a side wall, and a bottom surface of the active layer via a first contact hole through the interlayer insulating layer, the second gate insulating layer, the active layer, and a portion of the first gate insulating layer, and a second electrode on the interlayer insulating layer to contact the first gate electrode via a second contact hole through the interlayer insulating layer, the second gate insulating layer, and the first gate insulating layer.

Display substrate, method of manufacturing the same, and display device including the same

An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.

Display device and manufacturing method thereof

A method for etching an insulating layer includes: sequentially forming a first gate insulating layer, an amorphous silicon layer, a first interlayer insulating layer, and a second interlayer insulating layer on a substrate; applying a photoresist on the second interlayer insulating layer, and patterning the photoresist through a photo-process; first etching the second interlayer insulating layer and the first interlayer insulating layer until at least a portion of the amorphous silicon layer is exposed by using the patterned photoresist as a mask; second etching the second interlayer insulating layer and the first interlayer insulating layer; third etching the amorphous silicon layer; and fourth etching the first gate insulating layer, wherein an etching gas used in the second etching includes a material having a higher etching selection ratio of the first and second interlayer insulating layers to the amorphous silicon layer than an etching gas used in the first etching.

Method for etching insulating layer, method for manufacturing display device using the same, and display device

A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70&#xb0; to about 90&#xb0;. A thickness of the capping layer is in a range of about 100 &#x212b; to about 300 &#x212b;, and a thickness of the main conductive layer is in a range of about 1,000 &#x212b; to about 20,000 &#x212b;.

Display device, method for forming a pattern and method for manufacturing display device

A method of manufacturing a display substrate may include the following steps: forming a drain electrode on a pixel area of a substrate; forming a pad electrode on a pad area of the substrate; forming an inorganic insulation layer that covers the drain electrode and the pad electrode; forming an organic insulation member that has a first thickness at the pixel area of the substrate, has a second thickness less than the first thickness at the pad area of the substrate, exposes a first portion of the inorganic insulation layer on the drain electrode, and exposes a second portion of the inorganic insulation layer on the pad electrode; removing the first portion of the inorganic insulation layer and the second portion of the inorganic insulation layer; and partially removing the organic insulation member.

Display substrate, method of manufacturing display substrate, and display device including display substrate

Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same

An electronic device includes a display panel including a plurality of pixels. A first detection insulating layer is disposed on the display panel. A first conductive pattern is disposed on the first detection insulating layer. A compensation pattern is disposed on the first detection insulating layer. A second detection insulating layer is disposed on the first detection insulating layer and covers the first detection insulating layer, the compensation pattern and the first conductive pattern. A second conductive pattern is disposed on the second detection insulating layer. The first conductive pattern includes a lower surface in contact with the first detection insulating layer. An upper surface faces the lower surface and contacts the second detection insulating layer. Lateral side surfaces extend between the lower surface and the upper surface. The compensation pattern contacts the lateral side surfaces of the first conductive pattern.

Input detection unit and electronic device including same

A connecting structure of a conductive layer includes a first conductive layer, a first insulating layer disposed on the first conductive layer and including a first opening overlapping the first conductive layer, a connecting conductor disposed on the first insulating layer and connected to the first conductive layer through the first opening, an insulator island disposed on the connecting conductor, a second insulating layer disposed on the first insulating layer and including a second opening overlapping the connecting conductor and the insulator island, and a second conductive layer disposed on the second insulating layer and connected to a connecting electrode through the second opening. A sum of a thickness of the first insulating layer and a thickness of the second insulating layer is greater than or equal to 1 &#x3bc;m, and each of the thicknesses of the first and second insulating layers is less than 1 &#x3bc;m.

Connecting structure of a conductive layer

Growing community of inventors

Anyang-si, South Korea

Yu-Gwang Jeong