Chunghwa Picture Tubes, Ltd.

Yu-Fang Wang

Chin-Lung Yeh

Te-Yu Chen

Ya-Ju Lu

Ming-Chu Chen

Chih-kun Lin

Jun-Yao Huang

Heng-Chang Lin

Ming-Kang Huang

Chun-Jen Ma

A manufacturing method of asymmetric bumps is provided. First, a substrate is provided. A film layer is then formed on the substrate. Next, a complex photomask including at least one transparent region, a number of opaque regions, and a number of semi-transparent regions is provided. Each of the semi-transparent regions is disposed between two adjacent opaque regions, and at least one light-shielding pattern is randomly disposed in each of the semi-transparent regions. The film layer is then patterned with use of the complex photomask, and multiple asymmetric bumps are formed on the substrate. By using the complex photomask, manufacturing steps of the asymmetric bumps can be reduced. Besides, a manufacturing method of a pixel structure having the above-mentioned asymmetric bumps is also provided.

Manufacturing methods of asymmetric bumps and pixel structure

A liquid crystal display panel includes a first transparent substrate, a second transparent substrate opposite to the first transparent substrate, and a sealant disposed therebetween. The first transparent substrate includes a peripheral region, and a plurality of conductive lines disposed in the peripheral region. The conductive lines include a plurality of transparent conductive lines and non-transparent conductive lines. The sealant is disposed in the peripheral region.

Liquid crystal display panel

A method of manufacturing thin film transistor is provided, in which the method of manufacturing includes a new etching process of island semiconductor. The new etching process of island semiconductor is controlled by a flow rate of etching gas and a regulation of etching power. When etching the island semiconductor, a part of gate insulation layer exposed out of the island semiconductor is etched at the same time. Consequently, the thickness of gate insulation layer over the storage capacitance electrode is reduced, the distance between the pixel electrode and the storage capacitance electrode is decreased, and the storage capacitance of pixel is increased. Finally, the width of storage capacitance electrode is reduced appropriately and the aperture ratio of product is increased.

Method of manufacturing thin film transistor

A peripheral circuit disposed on a substrate having an active device array is provided. The peripheral circuit includes first test pads, second test pads, first lines, and second lines. The first and the second lines are electrically connected to the active device array. Each first test pad includes a first conductive layer and a second conductive layer electrically connected to the first conductive layer. The first conductive layer electrically connects at least two of the adjacent first lines. The second test pads are interposed between the first test pads and the active device array. Each second test pad includes third conductive layers and a fourth conductive layer electrically connected to the third conductive layers. The first lines pass through the third conductive layers and are insulated from the fourth conductive layer. Each third conductive layer is electrically connected to one of the adjacent second lines respectively.

Growing community of inventors

Taoyuan County, Taiwan

Yu-Fang Wang