Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Fan Peng

Yuan-Ching Peng

Yu-Bey Wu

Yu-Shan Lu

Chih-Han Lin

Shih-Yao Lin

Kuei-Yu Kao

Pei-Yi Liu

Chi-Sheng Lai

Wei-Chung Sun

Li-Ting Chen

Jing Yi Yan

Ying-Yan Chen

Yi-Cheng Li

Szu-Ping Lee

A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension Dat a top surface, a second dimension Dat a bottom surface, and a third dimension Dat a location between the top surface and the bottom surface, and wherein each of Dand Dis greater than D.

Semiconductor device structure with uneven gate profile

A method for manufacturing a semiconductor structure includes forming a fin over a substrate, wherein the fin includes first semiconductor layers and second semiconductor layers alternating stacked. The method also includes forming an isolation feature around the fin, forming a dielectric feature over the isolation feature, forming a cap layer over the fin and the dielectric feature, oxidizing the cap layer to form an oxidized cap layer, forming source/drain features passing through the cap layer and in the fin, removing the second semiconductor layers in the fin to form nanostructures, and forming a gate structure wrapping around the nanostructures.

Semiconductor structure and method for manufacturing the same

Growing community of inventors

Hsinchu, Taiwan

Yu-Fan Peng