Sandisk Technologies Inc.

Micron Technology Incorporated

Western Digital Technologies, Inc.

Yu-Chung Lien

Huai-Yuan Tseng

Zhenming Zhou

Deepanshu Dutta

Jiahui Yuan

Tomer Eliash

Ching-Huang Lu

Xue Bai Pitner

Xiang Yang

Murong Lang

Hua-Ling Cynthia Hsu

Sarath Chandran Puthenthermadam

Ravi J Kumar

Fanglin Zhang

Sujjatul Islam

Christopher John Petti

Mark Murin

Abhijith Prakash

Li-Te Chang

Juan Lee

Keyur Payak

Eran Sharon

Alexander Bazarsky

Henry Chin

Jun Wan

Ken Oowada

Dengtao Zhao

Michael G Miller

Bo Lei

Wei Wang

Tai-Yuan Tseng

Shinsuke Yada

Zhongguang Xu

Juane Li

Mark Shlick

Tomer Tzvi Eliash

Ohwon Kwon

Sead Zildzic, Jr

Swaroop Kaza

Vinh Q Diep

Erika Penzo

Zhenni Wan

Fanqi Wu

Zhuojie Li

Kazuki Isozumi

Vivek Shivhare

Peng Zhang

Michael Huai-Yuan Tseng

Kai Kirk

Joshua Garrison

A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: identifying a block of the memory device, the block spanning over a plurality of decks; determining whether a set of memory cells of the memory device is disposed in a first deck of the block or a second deck of the block, the first deck having a memory reliability metric satisfying a first criterion pertaining to a reliability of a deck, and the second deck having a memory reliability metric not satisfying the first criterion; selecting, based on the determination, an erase policy for performing an erase operation with respect to the set of memory cells; and causing the erase operation to be performed with respect to the set of memory cells in accordance with the erase policy.

Selection of erase policy in a memory device

Methods, systems, and apparatuses include receiving a command directed to a portion of memory. A cycle number for the portion of memory is determined. A group to which the portion of memory belongs is determined. A sensing time is determined using the cycle number and the group. The command is executed using the sensing time.

Adaptive sensing time for memory operations

Methods, systems, and apparatuses include determining an erase policy for a memory device. An erase operation is selected based on the determined erase policy, where the erase operations include an alternating erase operation and a uniform erase operation. The erase operation is executed on a portion of memory.

Dynamic erase operation selection using erase policy

A processing device is operatively coupled to an array of memory cells. The processing device determines that a media endurance metric value for a string of the array of memory cells satisfies a first threshold criterion based on a first threshold value. The processing device further controls, based on the media endurance metric value, a ramp rate of a program pulse applied to a wordline of the string.

Single-level cell programming with adaptive wordline ramp rate

Methods, systems, and apparatuses include determining to apply a read retry operation to a portion of memory. The likelihood of a read retry timeout meeting a threshold is determined. A reverse trim setting is selected in response to determining the likelihood of the read retry timeout meets the threshold. The read retry operation is executed using the selected trim setting.

Dynamic read retry voltage sequences in a memory subsystem

In some implementations, a memory device may detect a read command associated with reading data stored by the memory device. The memory device may determine whether the read command is from a host device in communication with the memory device. The memory device may select, based on whether the read command is from the host device, one of a first voltage pattern or a second voltage pattern to be applied to memory cells of the memory device to execute the read command, wherein the first voltage pattern is selected if the read command is from the host device and the second voltage pattern is selected if the read command is not from the host device, wherein the second voltage pattern is different from the first voltage pattern. The memory device may execute the read command using a selected one of the first voltage pattern or the second voltage pattern.

Memory read operation using a voltage pattern based on a read command type

Implementations described herein relate to a memory device with a fast write mode to mitigate power loss. In some implementations, the memory device may detect a condition associated with power supplied to the memory device. The memory device may detect one or more pending write operations to be performed to cause data to be written to memory cells of the memory device. The memory device may switch from a first voltage pattern, previously used by the memory device to write data to one or more memory cells of the memory device, to a second voltage pattern based on detecting the condition and based on detecting the one or more pending write operations. The memory device may perform at least one write operation, of the one or more pending write operations, using the second voltage pattern.

Memory device with fast write mode to mitigate power loss

A non-volatile semiconductor memory device, described herein, comprises a bit line, a source line, a memory string comprising a plurality of memory cells connected in series between the source line and the bit line, and control circuitry coupled to the plurality of memory cells, the source line, and the bit line. The control circuitry is configured to: determine if a program operation is a single-bit program operation or multi-bit program operation; in response to the determination, identify a voltage level to set the source line to during performance of the program operation; and perform the program operation on the memory string, the program operation including setting the source line to the voltage level.

CELSRC voltage separation between SLC and XLC for SLC program average ICC reduction

A first page read on the first memory page utilizing a first trim value is performed responsive to initiating a memory page scan on a first memory page of a plurality of memory pages. Whether a first data state metric associated with the first page read satisfies a first threshold criterion is determined. A second page read on the first memory page utilizing a second trim value is performed responsive to determining that the first data state metric satisfies the first threshold criterion. Whether a second data state metric associated with the second page read satisfies a second threshold criterion is determined. The second trim value to perform subsequent page reads during memory page scans is selected responsive to determining that the second data state metric does not satisfy the first threshold criterion.

Dynamic read level trim selection for scan operations of memory devices

Methods, systems, and apparatuses include determining an operation type for an operation. A sensing time is elected using the operation type. The operation is executed using the sensing time.

A memory subsystem receives a first read command and a second read command. Responsive to determining that the first read command originated from a host system, the memory subsystem selects a reverse read trim setting. Responsive to determining that the second read command did not originate from the host system, the memory subsystem selects a forward read trim setting. The memory subsystem executes the first read command using the reverse read trim setting. The memory subsystem executes the second read command using the forward read trim setting.

Management of dynamic read voltage sequences in a memory subsystem

A method includes determining that a program operation includes a first pass to apply a first voltage distribution to a plurality of memory cells and a second pass to apply a second voltage distribution to the plurality of memory cells, performing the first pass of the program operation using a first sensing time, and performing the second pass of the program operation using a second sensing time during the second pass of the program operation, where the first sensing time is shorter than the second sensing time.

Independent sensing times

Methods, systems, and apparatuses include receiving a command directed to a portion of memory. A cycle number for the portion of memory is determined. A group to which the portion of memory belongs is determined. A bitline voltage is determined using the cycle number and the group. The command is executed using the bitline voltage.

Adaptive bitline voltage for memory operations

A program command specifying new data to be programmed is received and partitioned into a plurality of data partitions. A wordline addressing a first set of memory cells to be programmed with a data partition of the plurality of data partitions is identified for a specified block of the memory device. Existing data stored by a second set of memory cells is read. An expected data state metrics is produced for each data partition of the plurality of data partitions. A data partition associated with a lowest expected data state metric among the plurality of expected data state metrics is identified. The identified data partition is programmed to the identified wordline.

Charge loss mitigation through dynamic programming sequence

An apparatus that includes a set of memory components of a memory sub-system is provided. The set of memory components include a first memory block comprising first units of linearly arranged memory cells and a second memory block comprising second units of linearly arranged memory cells. The set of memory components include a slit portion dividing the first and second memory blocks. The slit portion includes a capacitor in which a first metal portion of the capacitor is adjacent to the first units of linearly arranged memory cells and a second metal portion of the capacitor is adjacent to the second units of linearly arranged memory cells.

3D NAND memory with built-in capacitor

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San Jose, CA, United States of America

Yu-Chung Lien