Lextar Electronics Corporation

Yu-Chun Lee

Tzong-Liang Tsai

Hung-Chun Tong

Fu-Hsin Chen

Ru-Shi Liu

Ching-Yi Chen

Hung-Chia Wang

Yi-Ting Tsai

Li-Cheng Yang

Wen-Wan Tai

Shiou-Yi Kuo

Cheng-Ta Kuo

Chia-Chun Hsieh

Chang-Zhi Zhong

Chih-Hao Lin

Jian-Chin Liang

Chun Che Lin

An-Cih Tang

Wen-Li Zhou

Xue-Jie Zhang

Shin-Ying Lin

Chien-Nan Yeh

Chi Hsiu Lee

Yi-Jyun Chen

Chun-Che Lin

Mu-Huai Fang

Chaochin Su

Ling-Ling Wei

Ren-Hong Wang

Hoang Duy Nguyen

Kiet Tuong Ly

Ye Jin

Ya-Hsien Chang

Ren Hong Wang

Chun-Han Lu

Chong-Ci Hu

Zhen Bao

Yu-Jui Tseng

Chi-Wei Liu

Wei-Lun Wu

Huan Jiao

A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Method of manufacturing display device

A pixel package is provided. The pixel package includes a flexible redistribution layer and a plurality of LED chips arranged on the surface of the flexible redistribution layer in a flip-chip manner. The pixel package also includes a plurality of light-adjusting layers respectively disposed on the LED chips. The pixel package further includes a plurality of flexible composite laminates disposed on the surface of the flexible redistribution layer and between the LED chips.

Pixel package, method for forming the same, and display device using the same

A quantum dot oil-based ink is provided. The quantum dot oil-based ink includes a quantum dot material, a dispersing solvent, a viscosity modifier, and a surface tension modifying solution. The dispersing solvent includes a linear alkane having 6 to 14 carbon atoms. The viscosity modifier includes an aromatic hydrocarbon having 10 to 18 carbon atoms or a linear olefin having 16 to 20 carbon atoms. The surface tension modifying solution includes a hydrophobic polymer material and a nonpolar solvent.

Quantum dot oil-based ink and pattern recognition system

The wavelength conversion material includes a general formula (I) MABCDE:ESREand satisfies a condition (II) that a proportion of D for the wavelength conversion material greater than or equal to 50%. M is selected from a group consisting of Ca, Sr and Ba. A is selected from a group consisting of elements Mg, Mn, Zn and Cd. B is selected from a group consisting of elements B, Al, Ga and In. C is selected from a group consisting of Si, Ge, Ti and Hf. D is selected from a group consisting of elements, S and Se. E is selected from a group consisting of elements N and P. ES is selected from a group consisting of divalent Eu, Sm and Yb. RE is selected from a group consisting of trivalent Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Tm.

Wavelength conversion material, method of manufacturing thereof and light emitting device

In the present disclosure embodiments, a phosphate phosphor including an activation center of trivalent chromium and a light emitting device are provided. The light emitting device includes a light source and the above mentioned phosphate phosphor, such that the phosphate phosphor is excited by the light source and emits a wide spectrum of the infrared light. The light emitting device with wide emission spectrum of the infrared light may be widely applied in detecting devices.

Phosphate phosphor, light emitting device, and detecting device

A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of T&#xdc;V Rheinland and more than 90% of wide color gamut.

Light-emitting diode device

A light emitting device includes an LED die and a wavelength conversion layer. The LED die has a light emitting top surface and light emitting side surfaces. The wavelength conversion layer contains quantum dots and a photosensitive material, and is located on the light emitting top surface. A light emitting module including multiple light emitting devices is also disclosed.

Light emitting device and module

A picking apparatus is configured to pick up a plurality of micro elements. The picking apparatus includes an elastic plate, a substrate, a temperature-controlled adhesive layer, at least one heating element and a power source. The elastic plate has a first surface and a second surface opposite to each other. The substrate is disposed on the first surface. The temperature-controlled adhesive layer is disposed on the second surface and configured to adhere the micro elements. The heating element is disposed between the second surface and the temperature-controlled adhesive layer. The power source is electrically connected with the heating element. A viscosity of the temperature-controlled adhesive layer varies with a temperature of the temperature-controlled adhesive layer.

Picking apparatus with heating element and temperature-controlled adhesive and the method of using the same

Display device and manufacturing method thereof

A picking apparatus is configured to pick up a plurality of micro elements. The picking apparatus includes a main body and a plurality of picking portions. The picking portions connect with and protrude from the main body. Each of the picking portions has a first surface. The first surfaces are away from the main body and configured to pick up the micro elements. The main body has a second surface at least partially located between the picking portions. Each of the first surfaces has a first viscosity. The second surface has a second viscosity. The second viscosity is less than the first viscosity.

Picking apparatus capable of picking up target micro-elements

A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q) does not connect with any siloxy group, and the silicon atom of the first configuration (Q) connects with one siloxy group, and the silicon atom of the second configuration (Q) connects with two siloxy groups, and the silicon atom of the third configuration (Q) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.

Wavelength converting material, and light emitting device

A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.

Light-emitting package structure

A low blue light backlight module configured to emit a white light is provided. The low blue light backlight module includes a first light-emitting element, a second light-emitting element, a third light-emitting element and a fourth light-emitting element. The first light-emitting element is configured to emit a first light having a peak emission wavelength of about 610-660 nm. The second light-emitting element is configured to emit a second light having a peak emission wavelength of about 520-550 nm. The third light-emitting element is configured to emit a third light having a peak emission wavelength of about 480-580 nm. The fourth light-emitting element is configured to emit a fourth light having a peak emission wavelength of about 445-470 nm. The white light has an emission spectrum, and an area ratio of the spectrum under wavelength of 415-455 nm to the spectrum under wavelength of 400-500 nm is below 50%.

Low blue light backlight module

A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q(0Al), first configuration Q(1Al), second configuration Q(2Al), third configuration Q(3Al), and fourth configuration Q(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.

Wavelength converting material and light emitting device

A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.

Pixel structure

Growing community of inventors

Hsinchu County, Taiwan

Yu-Chun Lee