United Microelectronics Corp.

Himax Technologies, Inc.

Yu-Chun Huang

Chin-Fu Lin

Chun-Hung Cheng

Chia-Jong Liu

Yau-Kae Sheu

Shin-Chuan Huang

Yu-Chieh Lin

Liang-An Huang

Yuan-Cheng Yang

Hsin-Liang Liu

Tung-Ming Chen

I-Fang Huang

Yu-Ciao Lin

Keng-Chih Chen

A backlight control device for use in an electronic device includes a motion detecting unit, a sound matching unit and a controller. The motion detecting unit is configured to detect motion of a lid section of the electronic device to generate motion data. The sound matching unit is configured to match a soundprint derived from a sound sample that is captured by a sound capture unit, to one or more sound patterns stored within in a sound pattern database to generate a lid state indication signal if the motion data indicates the motion of the lid section corresponds to a predetermined state. The controller is configured to control a backlight module of a display device of the electronic device according to the lid state indication signal.

Backlight control device and method based on sound feature lid state detection

A method for fabricating a semiconductor device is described. A semiconductor substrate is provided, wherein the substrate has a first area and a second area. A first gate structure and a second gate structure are formed over the substrate in the first area and the substrate in the second area, respectively. A first spacer is framed on the sidewall of each gate structure. At least one etching process including at least one wet etching process is performed. The first spacer is removed. A second spacer is formed on the sidewall of each gate structure. A mask layer is formed in the second area. Ion implantation is formed using the mask layer, the first gate structure and the second spacer as a mask to form S/D extensions in the substrate beside the first gate structure in the first area. The mask layer is then removed.

Method for fabricating semiconductor device

A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.

Fabricating method of shallow trench isolation structure

Growing community of inventors

Tainan, Taiwan

Yu-Chun Huang